Abstract: Proposed is a vibration sensor including: a substrate; a first electrode positioned on the substrate; a support positioned on the first electrode and including a cylindrical hollow hole; and a diaphragm including a thin film positioned on the support and a second electrode positioned on the thin film. According to the present disclosure, it is possible to manufacture a skin-attachable vibration sensor that is attached to a user's neck to detect vibration acceleration in user's neck skin, thus exhibiting a uniform and high sensitivity to a user's voice over the frequency range of the human voice. In addition, the sensor sensitively detects a user's voice through neck skin vibrations rather than through air, thus being free from the influence of external noise or wind, and can recognize the user's voice even in a situation where a user's mouth is covered.

Abstract: Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.

Abstract: Proposed is a vibration sensor including: a substrate; a first electrode positioned on the substrate; a support positioned on the first electrode and including a cylindrical hollow hole; and a diaphragm including a thin film positioned on the support and a second electrode positioned on the thin film. According to the present disclosure, it is possible to manufacture a skin-attachable vibration sensor that is attached to a user's neck to detect vibration acceleration in user's neck skin, thus exhibiting a uniform and high sensitivity to a user's voice over the frequency range of the human voice. In addition, the sensor sensitively detects a user's voice through neck skin vibrations rather than through air, thus being free from the influence of external noise or wind, and can recognize the user's voice even in a situation where a user's mouth is covered.

Abstract: Disclosed is a method of manufacturing a surface-modified polymer film, including forming a hydroxyl group (—OH) on the surface of a polymer film by subjecting the polymer film to light irradiation and surface treatment with a photoacid generator. The polymer film can be introduced with a hydroxyl group (—OH) group using a photoacid generator, thereby modifying the surface of the polymer film without damage to the polymer film. Also, an organic electronic device including the surface-modified polymer film can be improved in electrical characteristics and stability.

Abstract: Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

Abstract: Disclosed is a graphene laminate including a first graphene layer, containing an electron-donating functional group, and a second graphene layer, disposed on the first graphene layer and configured to include graphene, wherein the second graphene layer is n-doped with the first graphene layer. Thereby, graphene is doped with amino-group-modified graphene, thus preventing the transparency of graphene from decreasing, and the extent of doping of graphene can be adjusted, and the doping effect can last a long time even without any protective layer.

Abstract: Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

Abstract: Disclosed is a 3D static RAM core cell having a vertically stacked structure, including six thin-film transistors each having a gate electrode, a source electrode and a drain electrode, the static RAM core cell including two switching thin-film transistors, each connected to a bit line and a word line to select recording and reading of data, and four data-storage thin-film transistors connected to a power supply voltage (Vdd) or a ground voltage (Vss) to record and read data, the static RAM core cell including a first transistor layer including two thin-film transistors selected from among the six thin-film transistors, a second transistor layer disposed on the first transistor layer and including two thin-film transistors selected from among the remaining four thin-film transistors, and a third transistor layer disposed on the second transistor layer and including the remaining two thin-film transistors, at least one electrode of the first transistor layer and at least one electrode of the second transistor

Abstract: Disclosed is a nanopatch graphene composite, which includes graphene including a defect and a nanopatch positioned on the defect, and is configured such that a nanopatch is formed through a self-assembling process on the surface of graphene, thus improving the mechanical properties and durability of the graphene composite. Also, a flexible organic transistor, including the nanopatch graphene composite of the invention, is transparent and has high mechanical durability, thus exhibiting device stability, and the molecular alignment of the organic semiconductor layer growing on the nanopatch graphene composite is induced so as to become favorable for charge injection, thereby increasing the performance of the device.

Abstract: Disclosed is a method of manufacturing an organic semiconductor thin film, including preparing semiconductor ink containing a solvent, a low-molecular-weight organic semiconductor and a high-molecular-weight organic semiconductor and forming an organic semiconductor thin film vertically phase-separated by applying the semiconductor ink on a substrate through a bar-coating process using a bar. In the bar-coating process of the invention, the semiconductor ink blend is used, and the gap between the substrate and the bar is adjusted, thus controlling vertical phase separation. Also, the speed of the bar, the gap of which is adjusted, is regulated, thus controlling crystal growth, whereby the uniformity of the thin film is improved and thus a high-quality organic semiconductor crystalline thin film having a large area can be manufactured in a continuous process.

Abstract: Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

Abstract: Disclosed is a method of manufacturing an organic semiconductor thin film, including preparing semiconductor ink containing a solvent, a low-molecular-weight organic semiconductor and a high-molecular-weight organic semiconductor and forming an organic semiconductor thin film vertically phase-separated by applying the semiconductor ink on a substrate through a bar-coating process using a bar. In the bar-coating process of the invention, the semiconductor ink blend is used, and the gap between the substrate and the bar is adjusted, thus controlling vertical phase separation. Also, the speed of the bar, the gap of which is adjusted, is regulated, thus controlling crystal growth, whereby the uniformity of the thin film is improved and thus a high-quality organic semiconductor crystalline thin film having a large area can be manufactured in a continuous process.

Abstract: Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

Abstract: Provided is a flexible substrate. The flexible substrate includes a first film having a first Young's modulus, a second film on the first film and having a second Young's modulus, and a third film between the first film and the second film and having a third Young's modulus. The third Young's modulus is less than each of the first Young's modulus and the second Young's modulus.

Abstract: Disclosed is a method of manufacturing a surface-modified polymer film, including forming a hydroxyl group (—OH) on the surface of a polymer film by subjecting the polymer film to light irradiation and surface treatment with a photoacid generator. The polymer film can be introduced with a hydroxyl group (—OH) group using a photoacid generator, thereby modifying the surface of the polymer film without damage to the polymer film. Also, an organic electronic device including the surface-modified polymer film can be improved in electrical characteristics and stability.

Abstract: Disclosed is a nanopatch graphene composite, which includes graphene including a defect and a nanopatch positioned on the defect, and is configured such that a nanopatch is formed through a self-assembling process on the surface of graphene, thus improving the mechanical properties and durability of the graphene composite. Also, a flexible organic transistor, including the nanopatch graphene composite of the invention, is transparent and has high mechanical durability, thus exhibiting device stability, and the molecular alignment of the organic semiconductor layer growing on the nanopatch graphene composite is induced so as to become favorable for charge injection, thereby increasing the performance of the device.

Abstract: Disclosed is a 3D static RAM core cell having a vertically stacked structure, including six thin-film transistors each having a gate electrode, a source electrode and a drain electrode, the static RAM core cell including two switching thin-film transistors, each connected to a bit line and a word line to select recording and reading of data, and four data-storage thin-film transistors connected to a power supply voltage (Vdd) or a ground voltage (Vss) to record and read data, the static RAM core cell including a first transistor layer including two thin-film transistors selected from among the six thin-film transistors, a second transistor layer disposed on the first transistor layer and including two thin-film transistors selected from among the remaining four thin-film transistors, and a third transistor layer disposed on the second transistor layer and including the remaining two thin-film transistors, at least one electrode of the first transistor layer and at least one electrode of the second transistor

Abstract: Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.

Abstract: A method of manufacturing graphene, including forming a metal catalytic layer on a substrate (Step a), providing a cover member on the metal catalytic layer of Step a (Step b), and growing graphene on the metal catalytic layer of Step b by performing chemical vapor deposition (Step c), whereby the size of the micro-scale grain boundary on the surface of the metal catalyst can be reduced by simultaneously promoting the aggregation of metal catalytic molecules in a chemical vapor deposition device and preventing the evaporation of the metal catalyst due to the effect of the cover member, ultimately improving the quality of synthesized graphene, including the transparency thereof. Also, a graphene sheet can be grown under various concentrations of carbon source gas, and efficient mass production thereof is possible in a chemical vapor deposition device having a confined space.

Abstract: Disclosed is a method of producing graphene, which includes bringing a metal catalyst into contact with hydrogen gas (Step a), bringing the metal catalyst in Step a into contact with at least one selected from among a hydrocarbon gas, nitrogen gas, and an inert gas (Step b), and forming graphene on the metal catalyst by bringing the metal catalyst in Step b into contact with hydrogen gas and a hydrocarbon gas (Step c), whereby the number of layers of graphene can be variously controlled as needed, regardless of the initial surface roughness of a metal catalyst layer, and also, the time required to form graphene can be shortened, thus reducing processing costs.