Patents by Inventor Kim Foong Kong

Kim Foong Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing sidewall etch residue
    Patent number: 8153527
    Abstract: A method for fabricating a semiconductor device is provided. The method comprising forming a first layer over a substrate and a second layer over the first layer. A patterned masking layer is subsequently provided over the second layer and a patterned second layer with outwardly tapered sidewalls is formed by isotropically etching exposed portions of the second layer. A patterned first layer is the formed by etching the first layer in accordance with the patterned second layer.
    Type: Grant
    Filed: October 13, 2008
    Date of Patent: April 10, 2012
    Assignee: Globalfoundries Singapore Pte. Ltd.
    Inventors: Soon Yoong Loh, Carol Goh, Kin Wai Tang, Kim Foong Kong
  • METHOD FOR REDUCING SIDEWALL ETCH RESIDUE
    Publication number: 20100091424
    Abstract: A method for fabricating a semiconductor device is provided. The method comprising forming a first layer over a substrate and a second layer over the first layer. A patterned masking layer is subsequently provided over the second layer and a patterned second layer with outwardly tapered sidewalls is formed by isotropically etching exposed portions of the second layer. A patterned first layer is the formed by etching the first layer in accordance with the patterned second layer.
    Type: Application
    Filed: October 13, 2008
    Publication date: April 15, 2010
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
    Inventors: Soon Yoong LOH, Carol GOH, Kin Wai TANG, Kim Foong KONG