Abstract: The disclosed matter provides systems and methods for encoding an assembly of three-dimensional (3D) hierarchically ordered nanoparticle architectures through chromatic bonds. Through identification of the repeating mesovoxels including chromatic bonds and voxels, the presented disclose matter can allow for encoding the 3D architectures by using symmetries of mesovoxel, enable a compression of the information amount required for encoding.

Abstract: A resistive random access memory (RRAM) device includes a plurality of memory cells, each of at least a subset of the memory cells including first and second electrodes and an organic thin film compound mixed with silver perchlorate (AgClO4) salt as a base layer that is incorporated with a prescribed quantity of inorganic metal oxide molecules using vapor-phase infiltration (VPI), the base layer being formed on an upper surface of the first electrode and the second electrode being formed on an upper surface of the base layer. Resistive switching characteristics of the RRAM device are controlled as a function of a concentration of AgClO4 salt in the base layer. A variation of device switching parameters is controlled as a function of an amount of infiltrated metal oxide molecules in the base layer.