Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: The invention is summarized as an underwater hair containment system (referred to herein as the “underwater hair containment system”) comprising a dive mask, a mask strap connected to the dive mask, and a pliable pocket for storing hair connected to the mask strap, wherein hair from a person wearing the dive mask can be tucked into the pliable pocket. The underwater hair containment system prevents long hair from getting tangled in scuba gear and underwater terrain. The underwater hair containment system allows a swimmer or diver to quickly and easily contain long hair during underwater activity. The underwater hair containment system also reduces exposure to the elements and keeps hair in place.