Abstract: A semiconductor device includes a signal carrier medium such as a PCB substrate having first and second opposed surfaces and a cavity formed in the second surface. A first set of one or more semiconductor dies are mounted on the first surface, and a second set of one or more semiconductor dies are mounted within the cavity. The first and/or second sets of semiconductor dies may be memory dies.

Abstract: A semiconductor memory device, also referred to as a solid state drive, includes thermally conductive components such as a conductive coating to draw heat away from the semiconductive package. The coating may also be electrically conductive to provide shielding from and absorption of electromagnetic interference. In examples, a semiconductor device including a substrate may be affixed to an edge connector printed circuit board with solder balls to form a solid state drive. In further examples, the substrate may be omitted, and semiconductor memory dies, a controller die and other electronic components may be directly surface mounted to an edge connector printed circuit board to form a solid state drive.

Abstract: A semiconductor device is disclosed including a die stack including a number of dies aligned with each other with respect to an axis, and a top die that is offset along the axis the to prevent die cracking.

Abstract: A semiconductor device is disclosed including a die stack including a number of dies aligned with each other with respect to an axis, and a top die that is offset along the axis the to prevent die cracking.

Abstract: A semiconductor die is disclosed including corner recesses to prevent cracking of the semiconductor die during fabrication. Prior to dicing the semiconductor die from the wafer, recesses may be formed in the wafer at corners between any pair of semiconductor die. The recesses may be formed by a laser or photolithographic processes in the kerf area between semiconductor die. Once formed, the corner recesses prevent cracking and damage to semiconductor die which could otherwise occur at the corners of adjacent semiconductor die as the adjacent semiconductor die move relative to each other during the backgrind process.

Abstract: A semiconductor device is disclosed including semiconductor die stacked in a stepped, offset configuration, where die bond pads of semiconductor die on different levels are interconnected using one or more conductive bumps.

Abstract: A semiconductor device is disclosed including semiconductor die stacked in a stepped, offset configuration, where die bond pads of semiconductor die on different levels are interconnected using one or more conductive bumps.

Abstract: A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.

Abstract: A semiconductor die is disclosed including corner recesses to prevent cracking of the semiconductor die during fabrication. Prior to dicing the semiconductor die from the wafer, recesses may be formed in the wafer at corners between any pair of semiconductor die. The recesses may be formed by a laser or photolithographic processes in the kerf area between semiconductor die. Once formed, the corner recesses prevent cracking and damage to semiconductor die which could otherwise occur at the corners of adjacent semiconductor die as the adjacent semiconductor die move relative to each other during the backgrind process.

Abstract: A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.

Abstract: A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

Abstract: A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

Abstract: A tool is disclosed for separating a semiconductor die from a tape to which the die is affixed during the wafer dicing process. The tool includes a pick-up arm for positioning a vacuum tip over a semiconductor die to be removed. The vacuum tip includes a non-uniform array of vacuum holes to grip the semiconductor wafer.