Patents by Inventor Kim Nam Sung

Kim Nam Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatment
    Patent number: 8790972
    Abstract: Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.
    Type: Grant
    Filed: August 19, 2010
    Date of Patent: July 29, 2014
    Assignees: Samsung Electronics Co., Ltd., International Business Machines Corporation, GLOBALFOUNDRIES Singapore Pte. Ltd., Freescale Semiconductor, Inc.
    Inventors: Yong-Kuk Jeong, Laegu Kang, Kim Nam Sung, Dae-won Yang
  • Methods of Forming CMOS Transistors Using Tensile Stress Layers and Hydrogen Plasma Treatment
    Publication number: 20120045873
    Abstract: Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.
    Type: Application
    Filed: August 19, 2010
    Publication date: February 23, 2012
    Inventors: Yong-Kuk Jeong, Laegu Kang, Kim Nam Sung, Dae-won Yang