Abstract: A method of forming a photovoltaic module including providing a first layer, applying a first adhesive layer to the first layer, securing a first layer of conductors on the sealing layer, securing a set of photovoltaic cells on the first layer of conductors, electrically coupling at least a portion of the photovoltaic cells in parallel, securing a set of interconnecting conductors to the first layer of conductors, securing a second layer of conductors to the photovoltaic cells and the interconnecting conductors, electrically coupling the interconnecting wires to the first layer of conductors and the second layer of conductors, wherein in at least one of the first layer of conductors, the second layer of conductors and the interconnecting conductors are non-flat electrical wires and applying a final layer over the of photovoltaic cells and the first layer of conductors, the interconnecting conductors and second layer of conductors. A method of forming a large scale photovoltaic module array is also disclosed.

Abstract: A thin film photovoltaic device comprises a metal back contact having a first p-type semiconductor film of CVD CIS thereon; a second, transparent, n-type semiconductor film of CVD zinc oxide on the CIS and a thin interfacial film of transparent, insulating zinc oxide between the p-type CIS film and the n-type metal oxide. The interfacial zinc oxide film is formed by depositing zinc hydroxide on the CIS from a solution of one of zinc sulfate, zinc chloride, and zinc acetate and complexing agents comprising ammonium hydroxide and TEA and annealing the deposit to convert the zinc hydroxide to form the zinc oxide.

Abstract: A photovoltaic module having a plurality of photovoltaic cells disposed behind a front cover portion to receive radiation has at least one specular reflector disposed alongside the cells to direct incident radiation back into the front cover portion and onto the photovoltaic cells for conversion to electrical energy. In a preferred embodiment, the specular reflectors have reflective surfaces of concave curvature configured to reflect incident radiation back into the front cover portion for internal reflection onto the photovoltaic cells.

Abstract: A method of making group I-III-VI compound semiconductors such as copper indium diselenide for use in thin film heterojunction photovoltaic devices. A composite film of copper, indium, and possibly other group IIIA elements, is deposited upon a substrate. A separate film of selenium is deposited on the composite film. The substrate is then heated in a chamber in the presence of a gas containing hydrogen to form the compound semiconductor material.

Abstract: A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.

Abstract: A phosphorous doped layer of cadmium telluride is deposited onto a conductive window layer to form a thin film cadmium telluride solar cell. Back contacts to the solar cell are made by first depositing a layer of p conductivity type lead telluride upon the cadmium telluride and then depositing the metallic back contacts onto the lead telluride.

Abstract: A phosphorous doped layer of cadmium telluride is deposited onto a conductive window layer to form a thin film cadmium telluride solar cell. Back contacts to the solar cell are made by first depositing a layer of p conductivity type lead telluride upon the cadmium telluride and then depositing the metallic back contacts onto the lead telluride.

Abstract: An electrically enhanced liquid jet process particularly adapted for forming scribe lines on thin film material deposited during fabrication of thin film solar cell devices. A narrow jet of liquid solution is directed onto a thin film along a desired line while an electrical current is passed through the liquid jet and the film being processed. The liquid solution is selected to remove material along the desired line only at its point of contact with the film but to be substantially nonreactive with the film in all other areas where there is an absence of electrical enhancement.

Abstract: A solar cell having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron.sup.2. The intermediate recrystallized film has a grain size in the range of from about 10 microns.sup.2 to about 10,000 microns.sup.2 and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns.sup.2. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

Abstract: Electromagnetic energy may be converted directly into electrical energy by a device comprising a sandwich of at least two semiconductor portions, each portion having a p-n junction with a characteristic energy gap, and the portions lattice matched to one another by an intervening superlattice structure. This superlattice acts to block propagation into the next deposited portion of those dislocation defects which can form due to lattice mismatch between adjacent portions.