Abstract: A method of forming a semiconductor device includes depositing a fill material (4) on a substrate portion (2) and on a dielectric layer (3) being disposed on the substrate (1) and having an opening (10) located above the substrate portion (2), removing the fill material (4) disposed above the dielectric layer (3), thereby leaving an exposed top surface (6) of the dielectric layer (3) and residual fill material (15) within the opening (10), forming a hard mask material (5) on the exposed top surface (6) of the dielectric layer (3) and on the residual fill material (15), patterning the hard mask material (5) for forming a hard mask (25) having trenches (8a, 8b) extending along a lateral direction (X) and exposing portions of the residual fill material (15) adjacent to the dielectric layer (3) and portions of the dielectric layer (3) adjacent to the residual fill material (15), anisotropically etching the dielectric layer (3), the residual fill material (15) and the substrate (1) selectively to the hard mask (5)

Abstract: A non-rectangular or asymmetrically shaped credit card or phone card with an associated case or holder. The card has a configuration that complements the configuration of the case so that the card is easily removed from the holder for access, yet is maintained inside the case in a covered position and is protected from abuse. The case is designed to be light-weight and easily carried and to serve as a device to carry the card in a safe and convenient manner outside of a wallet or purse. Alternatively, the card may be in an I-shape or square shape configuration.

Abstract: A method of forming a semiconductor device includes depositing a fill material (4) on a substrate portion (2) and on a dielectric layer (3) being disposed on the substrate (1) and having an opening (10) located above the substrate portion (2), removing the fill material (4) disposed above the dielectric layer (3), thereby leaving an exposed top surface (6) of the dielectric layer (3) and residual fill material (15) within the opening (10), forming a hard mask material (5) on the exposed top surface (6) of the dielectric layer (3) and on the residual fill material (15), patterning the hard mask material (5) for forming a hard mask (25) having trenches (8a, 8b) extending along a lateral direction (X) and exposing portions of the residual fill material (15) adjacent to the dielectric layer (3) and portions of the dielectric layer (3) adjacent to the residual fill material (15), anisotropically etching the dielectric layer (3), the residual fill material (15) and the substrate (1) selectively to the hard mask (5)

Abstract: The present invention relates to a method of fabricating a groove-like structure in a semiconductor device including etching a trench in a substrate, filling the trench with a spin-on-glass liquid forming a spin-on-glass liquid layer containing a solvent, baking the spin-on-glass liquid layer in order to remove the solvent and forming a baked layer, etching the baked layer to a predetermined depth using an etchant that provides a larger etch rate with regard to silicon than with regard to silicon nitride or silicon oxide, and, after etching the baked layer, annealing the remaining baked layer and forming a spin-on-glass oxide layer inside the trench.

Abstract: An integrated circuit is provided, which is formed on a semiconductor substrate. The integrated circuit comprises electronic elements and isolation elements, wherein the electronic elements and the isolation elements are arranged at a top surface of the semiconductor substrate. The isolation elements each are arranged between electronic elements and electrically isolate the electronic elements from each other. Furthermore, the isolation elements comprise an upper part and a lower part, wherein the upper part is broader than the lower part.

Abstract: An electrodeposition process is used to manufacture a thin layer of iridium (212) on a mandrel. A Controlled Atmosphere Plasma Spray (CAPS) process is used to fabricate a rhenium, rhenium containing alloy, or refractory alloy layer (210) on the electrodeposited iridium layer (212). After deposition of rhenium, rhenium containing alloy, or refractory alloy, the process uses a second CAPS process to apply a transition refractory material (214, 216), such as niobium, at each end of a rocket engine chamber (200). The electrodeposited iridium layer (212) provides a highly purified, highly ductile, uniform iridium layer (212).

Abstract: A non-rectangular or asymmetrically shaped credit card or phone card with an associated case or holder. The card has a configuration that complements the configuration of the case so that the card is easily removed from the holder for access, yet is maintained inside the case in a covered position and is protected from abuse. The case is designed to be light-weight and easily carried and to serve as a device to carry the card in a safe and convenient manner outside of a wallet or purse. Alternatively, the card may be in an I-shape or square shape configuration.

Abstract: A low temperature autoigniting composition for use in a mobile occupant restraint system comprising, a low temperature melting oxidizer and a fuel, wherein the low temperature autoigniting composition autoignites in the temperature range of about 130.degree. C. to about 175.degree. C. In a preferred embodiment, the composition comprises a low temperature melting oxidizer, a fuel, and a catalyst, wherein the composition autoignites in the temperature range of about 130.degree. C. to about 150.degree. C. Preferably, the oxidizer comprises about 20 to about 70 percent by weight of the composition, the fuel comprises about 10 to about 50 percent by weight of the composition, and the catalyst comprises about 2 to about 50 percent by weight of the composition. The autoignition propellants of the invention are designed to function at low temperatures and before heat damage to an airbag deployment mechanism can occur, for example, during a fire.