Patents by Inventor Kimberly Gay Reid

Kimberly Gay Reid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200052201
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In embodiments, after formation of the one or more CEM traces, a spacer may be deposited in contact with the one or more CEM traces. The spacer may operate to control an atomic concentration of dopant within the one or more CEM traces by replenishing dopant that may be lost during subsequent processing and/or by forming a seal to reduce further loss of dopant from the one or more CEM traces.
    Type: Application
    Filed: October 21, 2019
    Publication date: February 13, 2020
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric
  • Publication number: 20200043982
    Abstract: Subject matter disclosed herein may relate to devices formed from correlated electron material.
    Type: Application
    Filed: October 11, 2019
    Publication date: February 6, 2020
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric
  • Patent number: 10516110
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: December 24, 2019
    Assignee: ARM Ltd.
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Patent number: 10454026
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In embodiments, after formation of the one or more CEM traces, a spacer may be deposited in contact with the one or more CEM traces. The spacer may operate to control an atomic concentration of dopant within the one or more CEM traces by replenishing dopant that may be lost during subsequent processing and/or by forming a seal to reduce further loss of dopant from the one or more CEM traces.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: October 22, 2019
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric
  • Patent number: 10446609
    Abstract: Subject matter disclosed herein may relate to devices formed from correlated electron material.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: October 15, 2019
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric
  • Patent number: 10403816
    Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: September 3, 2019
    Assignee: Arm Limited
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Patent number: 10381560
    Abstract: Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: August 13, 2019
    Assignee: ARM Ltd.
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Publication number: 20190198758
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 27, 2019
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Christopher Randolph McWilliams, Lucian Shifren, Kimberly Gay Reid
  • Publication number: 20190173008
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
    Type: Application
    Filed: November 26, 2018
    Publication date: June 6, 2019
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric, Manuj Rathor, Glen Arnold Rosendale
  • Publication number: 20190157555
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Kimberly Gay Reid, Lucian Shifren
  • Patent number: 10276795
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, in which an ultraviolet light source is utilized during fabrication of a correlated electron material. In embodiments, use of ultraviolet light may decrease a likelihood of diffusion of atomic and/or molecular components of a substrate that may bring about undesirable electrical performance of a CEM device.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: April 30, 2019
    Assignee: ARM Ltd.
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Publication number: 20190109283
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
    Type: Application
    Filed: November 26, 2018
    Publication date: April 11, 2019
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Publication number: 20190088876
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.
    Type: Application
    Filed: November 19, 2018
    Publication date: March 21, 2019
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Patent number: 10217935
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: February 26, 2019
    Assignee: ARM Ltd.
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Christopher Randolph McWilliams, Lucian Shifren, Kimberly Gay Reid
  • Publication number: 20190058118
    Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Applicant: Arm Limited
    Inventors: Carlos Alberto PAZ de ARAUJO, Jolanta Bozena CELINSKA, Kimberly Gay REID, Lucian SHIFREN
  • Publication number: 20190058119
    Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Applicant: Arm Limited
    Inventors: Kimberly Gay REID, Lucian SHIFREN, Carlos Alberto PAZ de ARAUJO, Jolanta Bozena CELINSKA
  • Publication number: 20190051824
    Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.
    Type: Application
    Filed: October 15, 2018
    Publication date: February 14, 2019
    Applicant: Arm Limited
    Inventors: Kimberly Gay REID, Lucian SHIFREN
  • Patent number: 10193063
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: January 29, 2019
    Assignee: ARM Ltd.
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Kimberly Gay Reid, Lucian Shifren
  • Patent number: 10170700
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: January 1, 2019
    Assignee: ARM Ltd.
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Patent number: 10141504
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: November 27, 2018
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Kimberly Gay Reid, Greg Munson Yeric, Manuj Rathor, Glen Arnold Rosendale