Patents by Inventor Kimiaki Tamano

Kimiaki Tamano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10366870
    Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: July 30, 2019
    Assignee: TOSOH CORPORATION
    Inventors: Shigehisa Todoko, Kimiaki Tamano, Kenichi Itoh, Tetsuo Shibutami
  • Patent number: 9418771
    Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: August 16, 2016
    Assignee: TOSOH CORPORATION
    Inventors: Hideto Kuramochi, Kimiaki Tamano, Hitoshi Iigusa, Ryo Akiike, Tetsuo Shibutami
  • Publication number: 20160141159
    Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.
    Type: Application
    Filed: December 28, 2015
    Publication date: May 19, 2016
    Applicant: TOSOH CORPORATION
    Inventors: Shigehisa TODOKO, Kimiaki TAMANO, Kenichi ITOH, Tetsuo SHIBUTAMI
  • Patent number: 9336920
    Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.15 at %.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: May 10, 2016
    Assignee: TOSOH CORPORATION
    Inventors: Hideto Kuramochi, Kimiaki Tamano, Ryo Akiike, Hitoshi Iigusa
  • Publication number: 20150295116
    Abstract: To provide an oxide sintered body for a sputtering target, which is capable of adding specific elements to from an n-type semiconductor layer to a p-type semiconductor layer surface of a compound thin-film solar cell. An oxide sintered body which contains zinc (Zn) and at least one type of element (X) (excluding a case where magnesium is added alone) that has an ionization potential Ip of 4.5 eV?Ip?8.0 eV and an atomic radius d of 1.20 ??d?2.50 ? and which has a composition ratio (atomic ratio) of 0.0001?X/(Zn+X)?0.20 and a sintered density of at least 95%.
    Type: Application
    Filed: November 18, 2013
    Publication date: October 15, 2015
    Applicant: TOSOH CORPORATION
    Inventors: Ryo Akiike, Hideto Kuramochi, Kimiaki Tamano
  • Patent number: 9127352
    Abstract: Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials. A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: September 8, 2015
    Assignee: TOSOH CORPORATION
    Inventors: Kenichi Itoh, Kimiaki Tamano, Shigehisa Todoko, Tetsuo Shibutami
  • Publication number: 20150187548
    Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.
    Type: Application
    Filed: August 8, 2013
    Publication date: July 2, 2015
    Applicant: TOSOH CORPORATION
    Inventors: Hideto Kuramochi, Kimiaki Tamano, Ryo Akiike, Hitoshi Iigusa
  • Publication number: 20140332735
    Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.
    Type: Application
    Filed: November 29, 2012
    Publication date: November 13, 2014
    Inventors: Hideto Kuramochi, Kimiaki Tamano, Hitoshi Ilgusa, Ryo Akiike, Tetsuo Shibutami
  • Publication number: 20110240467
    Abstract: Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials. A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.
    Type: Application
    Filed: September 18, 2009
    Publication date: October 6, 2011
    Applicant: TOSOH CORPORATION
    Inventors: Kenichi Itoh, Kimiaki Tamano, Shigehisa Todoko, Tetsuo Shibutami
  • Publication number: 20110100808
    Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.
    Type: Application
    Filed: June 9, 2009
    Publication date: May 5, 2011
    Inventors: Shigehisa Todoko, Kimiaki Tamano, Kenichi Itoh, Tetsuo Shibutami