Abstract: A method of manufacturing a stator coil includes the steps of: (1) forming substantially planar electric wires each including in-slot portions to be received in slots of a stator core and turn portions to be located outside of the slots to connect the in-slot portions; (2) rolling each of the planar electric wires into a spiral shape by plastically deforming the turn portions; and (3) assembling the rolled electric wires through relative axial movements therebetween, each of the relative axial movements being made by axially moving first and second components relative to each other with both the first and second components radially elastically deformed and with each of the first and second components circumferentially positioned by at least one positioning member, each of the first and second components being one of the rolled electric wires or an electric wire sub-assembly comprised of a plurality of the rolled electric wires.

Abstract: A method of manufacturing a stator coil includes the steps of: (1) forming substantially planar electric wires each including in-slot portions to be received in slots of a stator core and turn portions to be located outside of the slots to connect the in-slot portions; (2) rolling each of the planar electric wires into a spiral shape by plastically deforming the turn portions; and (3) assembling the rolled electric wires through relative axial movements therebetween, each of the relative axial movements being made by axially moving first and second components relative to each other with both the first and second components radially elastically deformed and with each of the first and second components circumferentially positioned by at least one positioning member, each of the first and second components being one of the rolled electric wires or an electric wire sub-assembly comprised of a plurality of the rolled electric wires.

Abstract: A capacitive semiconductor sensor includes a sensor chip, a circuit chip, a plurality of bumps, and a plurality of dummy bumps. The sensor chip includes a dynamic quantity detector, which has a detection axis in one direction. The circuit chip includes a signal processing circuit. The sensor chip and the circuit chip are coupled by flip-chip bonding through the plurality of bumps. Furthermore, the sensor chip and the circuit chip are mechanically coupled through the plurality of dummy bumps.

Abstract: In a method of bonding a first bump on a surface of a first member and a second bump on a surface of a second member, a tip portion of the first bump is provided with a projection having a hardness greater than a hardness of each of the first and second bumps. The first and second members are positioned with respect to each other such that the first and second bumps face each other. The tip portion of the first bump is brought into contact with a tip portion of the second bump by sticking the projection into the tip portion of the second bump.

Abstract: An electronic device includes a power element on a first substrate and an electronic component on a second substrate. The first and second substrates are stacked so that the power element and the electronic component can be located between the first and second substrates. A first end of a first wire is connected to the power element. A second end of the first wire is connected to the first substrate. A middle portion of the first wire projects toward the second substrate. A first end of a second wire is connected to the power element. A second end of the wire extends above a top of the middle portion of the first conductive member and is connected to the second substrate.

Abstract: A manufacturing device of a semiconductor package includes: a holding element for holding a substrate; a bonding element for holding the package and bonding a first metal bump of the package to a second metal bump of the substrate; a monitoring element for irradiating an infrared light toward the substrate and monitoring an electrode pad under the second metal bump based on a reflected light reflected on the pad; and a determination element for determining a state of a bonding surface between the first and second metal bumps based on monitoring information of the pad. The monitoring element faces the bonding element through the holding element, the substrate and the package.

Abstract: In a method of bonding a first bump on a surface of a first member and a second bump on a surface of a second member, a tip portion of the first bump is provided with a projection having a hardness greater than a hardness of each of the first and second bumps. The first and second members are positioned with respect to each other such that the first and second bumps face each other. The tip portion of the first bump is brought into contact with a tip portion of the second bump by sticking the projection into the tip portion of the second bump.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.

Abstract: A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.

Abstract: A capacitive semiconductor sensor includes a sensor chip, a circuit chip, a plurality of bumps, and a plurality of dummy bumps. The sensor chip includes a dynamic quantity detector, which has a detection axis in one direction. The circuit chip includes a signal processing circuit. The sensor chip and the circuit chip are coupled by flip-chip bonding through the plurality of bumps. Furthermore, the sensor chip and the circuit chip are mechanically coupled through the plurality of dummy bumps.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A manufacturing device of a semiconductor package includes: a holding element for holding a substrate; a bonding element for holding the package and bonding a first metal bump of the package to a second metal bump of the substrate; a monitoring element for irradiating an infrared light toward the substrate and monitoring an electrode pad under the second metal bump based on a reflected light reflected on the pad; and a determination element for determining a state of a bonding surface between the first and second metal bumps based on monitoring information of the pad. The monitoring element faces the bonding element through the holding element, the substrate and the package.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.

Abstract: A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.

Abstract: A semiconductor device includes: a semiconductor substrate; an aluminum electrode disposed on the surface of the substrate; a protection film disposed on the aluminum electrode and having an opening; and a metallic electrode disposed on a surface of the aluminum electrode through the opening of the protection film. The surface of the aluminum electrode includes a concavity. The concavity has an opening side and a bottom side, which is wider than the opening side. In the device, a concavity and a convexity of the metallic electrode become small.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.