Abstract: A processing apparatus comprising a reaction chamber, a workpiece-supporting section located in the reaction chamber for supporting a workpiece, a gas distributor located in the reaction chamber and facing the workpiece-supporting section for distributing reaction gas to a workpiece that is on the supporting surface of the workpiece-supporting section, a gas supply for supplying the reaction gas into the reaction chamber through the gas distributor and at a predetermined pressure, and a drive mechanism for moving the gas distributor back and forth relative to the workpiece-supporting section in a direction that is parallel to the supporting surface of the workpiece-supporting section. The speed of the relative movement can be varied and the reaction gas flow rate can be controlled in accordance with the speed the relative movement or the position of the gas distributor with respect to the workpiece-supporting sector during the relative movement.

Abstract: Coating method and apparatus. Said coating method comprises setting pressure in a chamber higher than the vapor pressure of a solvent mixed in a liquid which is coated on the surface of a matter to be processed, and dropping and spreading the coating liquid on the surface of the matter while rotating the matter by a predetermined number of rotation.

Abstract: A method of measuring the temperature of a matter accurately, in non-contact fashion and without setting any emissivity comprising obtaining a spectral characteristics of absorbing electromagnetic waves inherent to a matter whose temperature is to be measured, obtaining those absorption peak wavelengths of the electromagnetic waves which correspond to two or more high points of electromagnetic wave absorption rate obtained from the spectral characteristics, measuring amounts of the electromagnetic waves, which have the absorption peak wavelengths, radiated from the temperature-measured matter, and calculating the temperature of the matter from blues of the radiant amounts of the electromagnetic waves thus measured.

Abstract: A heat process device according to the present invention includes a film-like heating body serving as a heat source for a heat transfer plate on which an object to be processed is mounted and heated. Therefore, the heat process device can be excellent in controlling the heating temperature. It can also apply a uniform heat process to the object. Further, it can be made small in size and easy to operate.

Abstract: CPU stores information showing a time-temperature relationship and applicable for either heating a semiconductor wafer to a hold temperature for a predetermined period of time or cooling the wafer from the hold temperature over a predetermined period of time, or for both, read the information. A conductive thin film heats the wafer in accordance with the information. A sensor detects the temperature of the wafer. A control system controls either the heating of the wafer or the cooling thereof, or both, in accordance with the detected temperature signal and the information.

Abstract: In a method of measuring the flow rate of an exhaust gas, an external atmosphere is caused to flow into a pipe which branches off from the main pipe to open at the other end onto the external atmosphere. The flow rate of the atmosphere in the branched-pipe is measured, and the flow rate of the exhaust gas in the main pipe corresponding to the measured value is determined based on a calibration curve.

Abstract: A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.