Patents by Inventor Kimihiro Kawagoe

Kimihiro Kawagoe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride compound semiconductor element
    Patent number: 7230263
    Abstract: In a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity, a first cap layer, made of a gallium nitride semiconductor that includes n-type impurity of lower concentration than that of said active layer and p-type impurity of lower concentration than that of said p-type cladding layer, and a second cap layer made p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity are stacked one on another between said active layer and said p-type cladding layer.
    Type: Grant
    Filed: April 8, 2002
    Date of Patent: June 12, 2007
    Assignee: Nichia Corporation
    Inventor: Kimihiro Kawagoe
  • Gallium nitride compound semiconductor element
    Publication number: 20040124500
    Abstract: In a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity,
    Type: Application
    Filed: October 14, 2003
    Publication date: July 1, 2004
    Inventor: Kimihiro Kawagoe