Patents by Inventor Kimihiro Okada
Kimihiro Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7598004Abstract: For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.Type: GrantFiled: March 30, 2005Date of Patent: October 6, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga, Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Yuichi Fukushima
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Patent number: 7556892Abstract: In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.Type: GrantFiled: March 30, 2005Date of Patent: July 7, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Mikio Takagi, Yuichi Fukushima, Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga
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Publication number: 20090057143Abstract: A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.Type: ApplicationFiled: October 28, 2008Publication date: March 5, 2009Inventors: Hiroki YOSHIKAWA, Toshinobu ISHIHARA, Satoshi OKAZAKI, Yukio INAZUKI, Tadashi SAGA, Kimihiro OKADA, Masahide IWAKATA, Takashi HARAGUCHI, Yuichi FUKUSHIMA
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Publication number: 20050244722Abstract: In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.Type: ApplicationFiled: March 30, 2005Publication date: November 3, 2005Applicants: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Mikio Takagi, Yuichi Fukushima, Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga
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Publication number: 20050217988Abstract: For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.Type: ApplicationFiled: March 30, 2005Publication date: October 6, 2005Applicants: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Toshinobu Ishihara, Satoshi Okazaki, Yukio Inazuki, Tadashi Saga, Kimihiro Okada, Masahide Iwakata, Takashi Haraguchi, Yuichi Fukushima
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Patent number: 6475681Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.Type: GrantFiled: March 22, 2001Date of Patent: November 5, 2002Assignee: Hoya CorporationInventors: Masaru Mitsui, Kimihiro Okada, Hideki Suda
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Publication number: 20010014425Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.Type: ApplicationFiled: March 22, 2001Publication date: August 16, 2001Applicant: Hoya CorporationInventors: Masaru Mitsui, Kimihiro Okada, Hideki Suda
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Patent number: 6242138Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.Type: GrantFiled: August 8, 2000Date of Patent: June 5, 2001Assignee: Hoya CorporationInventors: Masaru Mitsui, Kimihiro Okada, Hideki Suda
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Patent number: 6153341Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.Type: GrantFiled: June 7, 1999Date of Patent: November 28, 2000Assignee: Hoya CorporationInventors: Masaru Mitsui, Kimihiro Okada, Hideki Suda
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Patent number: 5942356Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.Type: GrantFiled: March 27, 1997Date of Patent: August 24, 1999Assignee: Hoya CorporationInventors: Masaru Mitsui, Kimihiro Okada, Hideki Suda