Abstract: A substrate carrying mechanism includes: a base; a substrate holding member placed on the base and capable of holding a substrate and of being advanced and retracted relative to the base; four or more detecting units respectively for detecting different parts of the edge of a substrate held by the substrate holding member when the substrate holding member holding a substrate is retracted; and a controller that determines whether or not a notch formed in the edge of the substrate has been detected by one of the detecting units, on the basis of measurements measured by the four or more detecting units and corrects an error in a transfer position where the substrate is to be transferred to the succeeding processing unit on the basis of measurements measured by the detecting units excluding the one detecting unit that has detected the notch of the substrate.

Abstract: A substrate carrying mechanism includes: a base; a substrate holding member placed on the base and capable of holding a substrate and of being advanced and retracted relative to the base; four or more detecting units respectively for detecting different parts of the edge of a substrate held by the substrate holding member when the substrate holding member holding a substrate is retracted; and a controller that determines whether or not a notch formed in the edge of the substrate has been detected by one of the detecting units, on the basis of measurements measured by the four or more detecting units and corrects an error in a transfer position where the substrate is to be transferred to the succeeding processing unit on the basis of measurements measured by the detecting units excluding the one detecting unit that has detected the notch of the substrate.

Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

Abstract: A plurality of production line recipes and film thickness measurement recipes that recite the same type of coating solution, but different target film thickness are prepared in a coating unit. Recipes that recite the same types of coating solution and the same film thickness are linked to a common spin curve. A film thickness measurement recipe is executed so as to calculate a compensated value for a revolving speed for each measured data of the film thickness. The designated values of revolving speeds of individual recipes can be compensated using the compensated value at a time.