Patents by Inventor Kiminori Mizuuchi

Kiminori Mizuuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7065035
    Abstract: When a wavelength of a first laser beam with which a first recording medium including a first recording layer is recorded and reproduced is indicated as ?1 (nm), a wavelength of a second laser beam with which a second recording medium including a second recording layer is recorded and reproduced as ?2 (nm), the relationship between the wavelength ?1 and the wavelength ?2 is set to be expressed by 10?|?1??2|?120. The first recording layer has a light absorptance ratio of at least 1.0 with respect to the wavelength ?1. The light transmittance of the first recording medium with respect to the wavelength ?2 is set to be at least 30 in both the cases where the recording layer is in a crystal state and in an amorphous state. In order to record and reproduce the optical multilayer disk with the above-mentioned characteristics, a multiwavelength light source with the following configuration is used.
    Type: Grant
    Filed: October 23, 2000
    Date of Patent: June 20, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Rie Kojima, Noboru Yamada
  • Publication number: 20060109542
    Abstract: An optical waveguide device includes a waveguide layer that converts a wavelength of incident light and emits converted light. In the waveguide layer, a ridge waveguide and slab waveguides are provided, the slab waveguides being formed on both sides of the ridge waveguide with recess portions intervening therebetween. The waveguide layer satisfies a multi-mode condition for the incident light, and light propagating through the ridge waveguide is in a single mode.
    Type: Application
    Filed: December 22, 2003
    Publication date: May 25, 2006
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Minoru Imaeda, Tatsuo Kawaguchi, Takashi Yoshino
  • Publication number: 20060051025
    Abstract: A method for forming a domain-inverted structure includes the following: using a ferroelectric substrate (1) having a principal surface substantially perpendicular to the Z axis of crystals; providing a first electrode (3) on the principal surface of the ferroelectric substrate, the first electrode having a pattern of a plurality of electrode fingers (5) that are arranged periodically; providing a counter electrode (6) on the other side of the ferroelectric substrate so as to be opposite from the first electrode; and applying an electric field to the ferroelectric substrate with the first electrode and the counter electrode, thereby forming domain-inverted regions corresponding to the pattern of the first electrode in the ferroelectric substrate. Each of the electrode fingers of the first electrode is located so that a direction from a base to a tip (5a) of the electrode finger is aligned with the Y-axis direction of the crystals of the ferroelectric substrate.
    Type: Application
    Filed: November 21, 2003
    Publication date: March 9, 2006
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiminori Mizuuchi, Akihiro Morikawa, Tomoya Sugita
  • Patent number: 7010006
    Abstract: A light source device can attain a stable output of a harmonic even when there occurs a change in the ambient temperature or fluctuation in the output power. The light source device is provided with a semiconductor laser source (4), an optical waveguide-type QPM-SHG device (5) for generating a second harmonic from light emitted from the semiconductor laser source (4), a wavelength control means (7) for controlling a wavelength of light emitted from the semiconductor laser source (4), a means for slightly fluctuating wavelength (8) for changing a wavelength of light emitted from the semiconductor laser source (4) and a means for detecting a change in output light power of the optical waveguide-type QPM-SHG device (5) that occurs when a wavelength of light emitted from the semiconductor laser source (4) is changed.
    Type: Grant
    Filed: June 21, 2002
    Date of Patent: March 7, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ken'ichi Kasazumi, Yasuo Kitaoka, Tosifumi Yokoyama, Kiminori Mizuuchi, Kazuhisa Yamamoto, Hisashi Senga, Shigeru Furumiya, Hiromichi Ishibashi
  • Patent number: 6999668
    Abstract: The invention provides a method for manufacturing an optical waveguide device, with which the thickness of an optical substrate can be controlled with high precision. The surface of a substrate is masked by applying a resist to all regions of the substrate except where stopper portions are to be formed (i.e. to the left and right in width direction of the substrate). Then, the stopper portions are formed on the surface of the substrate by sputtering/vapor deposition of Cr, and then the resist is removed. Using a UV curing resin, an Mg-doped LiNbO3 optical substrate is laminated between the pair of stopper portions to the left and right of the surface of the substrate. After laminating the optical substrate, which is made of a non-linear optical material, the optical substrate is abraded.
    Type: Grant
    Filed: January 2, 2003
    Date of Patent: February 14, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshifumi Yokoyama, Kiminori Mizuuchi
  • Publication number: 20050254393
    Abstract: An optical information processing device is provided with a multi-wavelength light source that emits light of two or more different wavelengths, a filter portion that separates the light emitted from the multi-wavelength light source according to wavelength, and a condensing lens that focuses a plurality of lights separated by the filter portion on the same point for multi-wavelength recording.
    Type: Application
    Filed: August 18, 2003
    Publication date: November 17, 2005
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto
  • Patent number: 6914918
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: July 5, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Publication number: 20050116614
    Abstract: A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.
    Type: Application
    Filed: November 19, 2004
    Publication date: June 2, 2005
    Inventors: Isao Kidoguch, Yasuo Kitaoka, Hiroyoshi Yajima, Keiji Ito, Akihiko Ishibashi, Yoshiaki Hasegawa, Kiminori Mizuuchi
  • Publication number: 20050111335
    Abstract: A holographic optical information playback apparatus for playing information that is recorded on a recording medium in a form of interference fringes is provided with a two-dimensional photoreceptor array which receives a two-dimensional array of light spots that is diffracted at the recording medium due to application of reference light onto the medium, and outputs a playback signal including information recorded on the recording medium. The two-dimensional photoreceptor array has a photoreceptor section in which plural photoreceptor cells for detecting the intensities of received lights are arranged so that a photoreceptive area corresponding to the light spot array is formed, and assigns plural photoreceptor cells are assigned to each light spot in the light spot array according to the irradiation position of the light spot array, whereby the light intensity of one light sport is detected using the output signals from the plural photoreceptor cells.
    Type: Application
    Filed: October 22, 2004
    Publication date: May 26, 2005
    Inventors: Kenichi Kasazumi, Kiminori Mizuuchi, Kazuhisa Yamamoto
  • Patent number: 6829080
    Abstract: An optical waveguide device is provided that can reduce external interference noise. The optical waveguide device includes a substrate, an optical waveguide formed on the substrate, a periodic polarization inversion region formed on the optical waveguide, and an optical thin film formed in a portion of the optical waveguide. The optical waveguide (refractive index: N2) and the optical thin film (refractive index: N1) differ in refractive index dispersion, and the magnitude relationship between the refractive indexes is reversed depending on wavelength. The relationship N1>N2 is established for light having a shorter wavelength, while the relationship N2>N1 is established for light having a longer wavelength.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: December 7, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akihiro Morikawa, Ken'ichi Kasazumi, Yasuo Kitaoka, Kiminori Mizuuchi, Kazuhisa Yamamoto
  • Patent number: 6785457
    Abstract: The present invention aims to simplify a mass production process of an optical waveguide device and to reduce cost as well as noise. The optical waveguide device includes an optical waveguide whose entrance end face and exit end face are substantially parallel to each other. A SHG device is mass-produced by optically polishing an optical material substrate with a large area and then cutting the substrate. This method can mass-produce the optical waveguide devices having a uniform device length. The angle between the exit end face of the optical waveguide and the direction of an optical axis of the optical waveguide at the exit end face is not 90°, thereby reducing return light from the exit end face.
    Type: Grant
    Filed: August 1, 2002
    Date of Patent: August 31, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Ken'ichi Kasazumi, Yasuo Kitaoka
  • Publication number: 20040105469
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a nonlinear optical effect, a highly reliable element is provided.
    Type: Application
    Filed: November 13, 2003
    Publication date: June 3, 2004
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Publication number: 20040095971
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 20, 2004
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Publication number: 20040095972
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 20, 2004
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Publication number: 20040095970
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1 an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 20, 2004
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Publication number: 20040095973
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 20, 2004
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Publication number: 20040066807
    Abstract: A light source device can attain a stable output of a harmonic even when there occurs a change in the ambient temperature or fluctuation in the output power. The light source device is provided with a semiconductor laser source (4), an optical waveguide-type QPM-SHG device (5) for generating a second harmonic from light emitted from the semiconductor laser source (4), a wavelength control means (7) for controlling a wavelength of light emitted from the semiconductor laser source (4), a means for slightly fluctuating wavelength (8) for changing a wavelength of light emitted from the semiconductor laser source (4) and a means for detecting a change in output light power of the optical waveguide-type QPM-SHG device (5) that occurs when a wavelength of light emitted from the semiconductor laser source (4) is changed.
    Type: Application
    Filed: June 26, 2003
    Publication date: April 8, 2004
    Inventors: Ken?apos;ichi Kasazumi, yasuo Kitaoka, Tosifumi Yokohama, Kiminori Mizuuchi, Kazuhisa Yamamoto, Hisashi Senga, Shigeru Furumiya, Hiromichi Ishibashi
  • Patent number: 6711183
    Abstract: An optical wavelength conversion device includes: two or more non-linear optical crystals each having approximately identical phase matching conditions for a fundamental wave light and a second harmonic wave light; and a phase adjusting section inserted between the adjacent non-linear optical crystals, wherein the phase adjusting section a dispersion characteristic which is different from that of the non-linear optical crystals, and the phase adjusting section is formed so as to allow at least one of a refractive index or a length thereof to be modulated.
    Type: Grant
    Filed: May 18, 1999
    Date of Patent: March 23, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiminori Mizuuchi, Kazuhisa Yamamoto, Yasuo Kitaoka
  • Patent number: 6704337
    Abstract: A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
    Type: Grant
    Filed: July 17, 2001
    Date of Patent: March 9, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yasuo Kitaoka, Kiminori Mizuuchi, Kazuhisa Yamamoto
  • Patent number: 6693936
    Abstract: A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
    Type: Grant
    Filed: July 17, 2001
    Date of Patent: February 17, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yasuo Kitaoka, Kiminori Mizuuchi, Kazuhisa Yamamoto