Abstract: A level difference measuring apparatus that measures a level difference on a specimen surface having unevenness formed thereon includes: an atomic force microscope configured to measure a surface height of each of a plurality of measurement points set on the specimen surface; and a level difference calculation unit configured to calculate the level difference in a measurement target area including the plurality of measurement points. The level difference calculation unit sets a measurement area including at least one level difference portion in the measurement target area, generates a histogram by histogramming the surface heights of the measurement points provided in the measurement area, and calculates, based on the histogram, the level difference of the level difference portion provided in the measurement area.

Abstract: A modeling method of shape-approximating a shape measurement target provided in a structure having a stack structure by a boundary line, and a standard deviation is provided as a tolerance for a measurement value of the shape measurement target, and a calculation boundary line is arranged to converge within the tolerance, and thereby, a shape of the shape measurement target is expressed.

Abstract: According to one embodiment, a semiconductor defect inspection apparatus includes: an object-under-examination stage on which an inspection target object is placed; an X-ray irradiation unit that irradiates the object-under-examination stage with X-rays; an imaging unit that detects transmitted X-rays which passed through the inspection target object; a fluorescent X-ray detection unit that detects fluorescent X-rays which are emitted from the inspection target object by irradiation with the X-rays; and a defect detection unit that detects a first defect by an analysis of a transmission X-ray image which is obtained by performing photoelectric conversion of the transmitted X-rays and detects a second defect by a spectrum analysis of the fluorescent X-rays.

Abstract: An imprinting system according to an embodiment includes a first measuring device measuring an intensity of light reflected from an end of a shot area of a monitor substrate being an area on which imprinting has been performed, a dripping condition generating device generating a dripping condition of a resin-based mask material on the basis of the measured intensity of light, and an imprinting apparatus performing imprinting using the dripping condition. The imprinting apparatus includes a second measuring device measuring an intensity of light reflected from an end of a first shot area of a production substrate being an area on which imprinting has been performed, and a control unit adjusting arrangement of droplets of a resin-based mask material ejected on a second shot area of the production substrate being an area on which imprinting is to be performed on the basis of an intensity of light reflected from an end of the first shot area.

Abstract: A semiconductor defect inspection apparatus for inspecting a specimen including a semiconductor substrate having a surface on which a predetermined pattern is formed, includes an excitation light irradiator, a polarization converter, a detector, and a defect analysis detector. The excitation light irradiator irradiates the specimen with excitation light along an optical path from the irradiator to the specimen and such that the excitation light is obliquely incident at a predetermined incident angle. The first polarization converter is disposed in the optical path, and converts the excitation light into s-polarized light. The detector detects photoluminescence light generated from the specimen when the excitation light is incident on the specimen. The defect analysis detector detects a dislocation defect by analyzing a photoluminescence image obtained by photoelectrically converting the photoluminescence light.

Abstract: A semiconductor defect inspection apparatus for inspecting a specimen including a semiconductor substrate having a surface on which a predetermined pattern is formed, includes an excitation light irradiator, a polarization converter, a detector, and a defect analysis detector. The excitation light irradiator irradiates the specimen with excitation light along an optical path from the irradiator to the specimen and such that the excitation light is obliquely incident at a predetermined incident angle. The first polarization converter is disposed in the optical path, and converts the excitation light into s-polarized light. The detector detects photoluminescence light generated from the specimen when the excitation light is incident on the specimen. The defect analysis detector detects a dislocation defect by analyzing a photoluminescence image obtained by photoelectrically converting the photoluminescence light.

Abstract: A measurement apparatus includes a filter changing a light amount of an irradiation light, a lens irradiating a surface of a material with the irradiation light, a stage changing a focus position of the irradiation light in a depth direction of the material, an interfering light extractor causing the irradiation light to interfere with reflected light from the material, a detector detecting an intensity of interfering light obtained by interference between the irradiation light and the reflected light, and a controller calculating a height of the surface of the material based on the detected intensity of interfering light while changing a relative focus position of the irradiation light with respect to the material at a given measurement point of the surface of the material. The controller controls the filter or light source based on the detected intensity of interfering light to change the light amount of the irradiation light.

Abstract: According to one embodiment, a semiconductor defect inspection apparatus includes: an object-under-examination stage on which an inspection target object is placed; an X-ray irradiation unit that irradiates the object-under-examination stage with X-rays; an imaging unit that detects transmitted X-rays which passed through the inspection target object; a fluorescent X-ray detection unit that detects fluorescent X-rays which are emitted from the inspection target object by irradiation with the X-rays; and a defect detection unit that detects a first defect by an analysis of a transmission X-ray image which is obtained by performing photoelectric conversion of the transmitted X-rays and detects a second defect by a spectrum analysis of the fluorescent X-rays.

Abstract: A measurement apparatus includes a filter changing a light amount of an irradiation light, a lens irradiating a surface of a material with the irradiation light, a stage changing a focus position of the irradiation light in a depth direction of the material, an interfering light extractor causing the irradiation light to interfere with reflected light from the material, a detector detecting an intensity of interfering light obtained by interference between the irradiation light and the reflected light, and a controller calculating a height of the surface of the material based on the detected intensity of interfering light while changing a relative focus position of the irradiation light with respect to the material at a given measurement point of the surface of the material. The controller controls the filter or light source based on the detected intensity of interfering light to change the light amount of the irradiation light.

Abstract: An imprinting system according to an embodiment includes a first measuring device measuring an intensity of light reflected from an end of a shot area of a monitor substrate being an area on which imprinting has been performed, a dripping condition generating device generating a dripping condition of a resin-based mask material on the basis of the measured intensity of light, and an imprinting apparatus performing imprinting using the dripping condition. The imprinting apparatus includes a second measuring device measuring an intensity of light reflected from an end of a first shot area of a production substrate being an area on which imprinting has been performed, and a control unit adjusting arrangement of droplets of a resin-based mask material ejected on a second shot area of the production substrate being an area on which imprinting is to be performed on the basis of an intensity of light reflected from an end of the first shot area.

Abstract: In accordance with an embodiment, an inspection apparatus includes an irradiating section, a detecting section and a control section. The irradiating section is configured to irradiate a sample with light. The detecting section is configured to detect the light reflected by the sample. The control section is configured to classify defects of the sample on the basis of a difference between a first signal outputted from the detecting section by irradiating the sample with the light under a first optical condition and a second signal outputted from the detecting section by irradiating the sample with the light under a second optical condition different from the first optical condition.

Abstract: In accordance with an embodiment, a pattern inspection method includes applying a light to a substrate including an inspection target pattern in a plurality of optical conditions, detecting a reflected light from the substrate to acquire a pattern image for each of the optical conditions, outputting a gray value difference between the pattern image and a reference image for each of the optical conditions, and specifying a position of the defect in a stacking direction of the stacked film from a relation of the obtained gray value difference between the optical conditions. The pattern is formed by a stacked film, the optical conditions includes at least a first optical condition for detection of a defect on a surface of the stacked film.

Abstract: In accordance with an embodiment, a pattern inspection method includes applying a light to a substrate including an inspection target pattern in a plurality of optical conditions, detecting a reflected light from the substrate to acquire a pattern image for each of the optical conditions, outputting a gray value difference between the pattern image and a reference image for each of the optical conditions, and specifying a position of the defect in a stacking direction of the stacked film from a relation of the obtained gray value difference between the optical conditions. The pattern is formed by a stacked film, the optical conditions includes at least a first optical condition for detection of a defect on a surface of the stacked film.

Abstract: In one embodiment, a pattern inspection apparatus includes a light source configured to generate light, and a condenser configured to shape the light into a line beam to illuminate a wafer with the line beam. The apparatus further includes a spectrometer configured to disperse the line beam reflected from the wafer. The apparatus further includes a two-dimensional detector configured to detect the line beam dispersed by the spectrometer, and output a signal including spectrum information of the line beam. The apparatus further includes a comparison unit configured to compare the spectrum information obtained from corresponding places of a repetitive pattern on the wafer with each other, and a determination unit configured to determine whether the wafer includes a defect, based on a comparison result of the spectrum information.

Abstract: A pattern inspection device has a light irradiator configured to irradiate a light on an inspection area set in a pattern forming location on a semiconductor wafer and an adjustment area set different from the inspection area in association with the inspection area on the semiconductor wafer, an image pickup part for inspection configured to pick up a light which is irradiated by the light irradiator and reflected on the inspection area to generate an inspection image, a tester configured to conduct a pattern inspection of the semiconductor wafer based on the inspection image, an image pickup part for adjustment configured to pick up a light which is irradiated by the light irradiator and reflected on the adjustment area to generate an adjustment image, and a light amount adjuster configured to adjust an amount of the light irradiated on the inspection area by the light irradiator so as to reduce a fluctuation of a luminance of the inspection image due to a difference of a thickness of the pattern based on th

Abstract: A shock absorbing steering apparatus for use in a vehicle, including a steering column to be fixed to a portion of a body of the vehicle such that the steering column is releasable from the body of the vehicle and movable in a forward direction of the vehicle in the event of a secondary collision of an occupant of the vehicle upon a collision of the vehicle, and wherein one of the steering column and the portion of the vehicle body includes a mounting portion, while the other of the steering column and the portion of the vehicle body includes a holding portion. The steering apparatus further includes an impact energy absorbing member to be mounted on the mounting portion.

Abstract: A shock absorbing steering apparatus for use in a vehicle, including a steering column to be fixed to a portion of a body of the vehicle such that the steering column is releasable from the body of the vehicle and movable in a forward direction of the vehicle in the event of a secondary collision of an occupant of the vehicle upon a collision of the vehicle, and wherein one of the steering column and the portion of the vehicle body includes a mounting portion, while the other of the steering column and the portion of the vehicle body includes a holding portion. The steering apparatus further includes an impact energy absorbing member to be mounted on the mounting portion.

Abstract: A support mechanism of a steering system that supports a steering column to a part of a vehicle body includes an energy absorbing member mounted on the side of a steering column or the vehicle body, a support pin mounted on the side of the vehicle body or the steering column, that deforms the energy absorbing member when the steering column moves relative to the vehicle body, and an actuator mounted on the side of the steering column or the vehicle body, that changes deformation characteristics of the energy absorbing member.

Abstract: A support mechanism of a steering system that supports a steering column to a part of a vehicle body includes an energy absorbing member mounted on the side of a steering column or the vehicle body, a support pin mounted on the side of the vehicle body or the steering column, that deforms the energy absorbing member when the steering column moves relative to the vehicle body, and an actuator mounted on the side of the steering column or the vehicle body, that changes deformation characteristics of the energy absorbing member.