Abstract: There is provided a reel comprising a bearing in which the inward surfaces of the outer ring and inner ring of the bearing are covered with a liquid water-repellent agent having lubricity, and further the exposed surfaces of the outer ring and the inner ring are also covered with the water-repellent agent or another water-repelling material.

Abstract: There is provided a reel comprising a bearing in which the inward surfaces of the outer ring and inner ring of the bearing are covered with a liquid water-repellent agent having lubricity, and further the exposed surfaces of the outer ring and the inner ring are also covered with the water-repellent agent or another water-repelling material.

Abstract: The present invention provides an immunodeficient mouse (NOG mouse) suitable for engraftment, differentiation and proliferation of heterologous cells, and a method of producing such a mouse. This mouse is obtained by backcrossing a C.B-17-scid mouse with an NOD/Shi mouse, and further backcrossing an interleukin 2-receptor ?-chain gene-knockout mouse with the thus backcrossed mouse. It is usable for producing a human antibody and establishing a stem cell assay system, a tumor model and a virus-infection model.

Abstract: The present invention provides an immunodeficient mouse (NOG mouse) suitable for engraftment, differentiation and proliferation of heterologous cells, and a method of producing such a mouse. This mouse is obtained by backcrossing a C.B-17-scid mouse with an NOD/Shi mouse, and further backcrossing an interleukin 2-receptor ?-chain gene-knockout mouse with the thus backcrossed mouse. It is usable for producing a human antibody and establishing a stem cell assay system, a tumor model and a virus-infection model.

Abstract: The present invention provides an immunodeficient mouse (NOG mouse) suitable for engraftment, differentiation and proliferation of heterologous cells, and a method of producing such a mouse. This mouse is obtained by backcrossing a C.B-17-scid mouse with an NOD/Shi mouse, and further backcrossing an interleukin 2-receptor ?-chain gene-knockout mouse with the thus backcrossed mouse. It is usable for producing a human antibody and establishing a stem cell assay system, a tumor model and a virus-infection model.

Abstract: The present invention provides an immunodeficient mouse (NOG mouse) suitable for engraftment, differentiation and proliferation of heterologous cells, and a method of producing such a mouse. This mouse is obtained by backcrossing a C.B-17-scid mouse with an NOD/Shi mouse, and further backcrossing an interleukin 2-receptor ?-chain gene-knockout mouse with the thus backcrossed mouse. It is usable for producing a human antibody and establishing a stem cell assay system, a tumor model and a virus-infection model.

Abstract: The present invention provides an immunodeficient mouse (NOG mouse) suitable for engraftment, differentiation and proliferation of heterologous cells, and a method of producing such a mouse. This mouse is obtained by backcrossing a C.B-17-scid mouse with an NOD/Shi mouse, and further backcrossing an interleukin 2-receptor ?-chain gene-knockout mouse with the thus backcrossed mouse. It is usable for producing a human antibody and establishing a stem cell assay system, a tumor model and a virus-infection model.

Abstract: The present invention provides an immunodeficient mouse (NOG mouse) suitable for engraftment, differentiation and proliferation of heterologous cells, and a method of producing such a mouse. This mouse is obtained by backcrossing a C.B-17-scid mouse with an NOD/Shi mouse, and further backcrossing an interleukin 2-receptor &ggr;-chain gene-knockout mouse with the thus backcrossed mouse. It is usable for producing a human antibody and establishing a stem cell assay system, a tumor model and a virus-infection model.

Abstract: Plural pins are arranged on a printed circuit board to form a generally square shape and are electrically connected to terminals of a QFP-IC. In the pins, a pin disposed at a corner portion of the generally square shape is used as a GND terminal, and a pin adjoining the GND terminal is used as a source terminal. A conductive region is provided to extend radially from the corner portion, and is electrically connected to the ground terminal. Further, another conductive region is provided in the generally square shape and is electrically connected to the radial conductive region.

Abstract: Plural pins are arranged on a printed circuit board to form a generally square shape and are electrically connected to terminals of a QFP-IC. In the pins, a pin disposed at a corner portion of the generally square shape is used as a GND terminal, and a pin adjoining the GND terminal is used as a source terminal. A conductive region is provided to extend radially from the corner portion, and is electrically connected to the ground terminal. Further, another conductive region is provided in the generally square shape and is electrically connected to the radial conductive region.

Abstract: A method for manufacturing semiconductor-type laminated ceramic capacitors with a grain boundary-insulated structure including the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying the mixed powder; forming raw sheets; printing a pattern of inner electrode paste on the surface of the raw sheets; calcinating the laminated body in air; sintering the laminated raw sheets in reducing atmosphere or in nitrogen atmosphere after calcination; re-oxidizing in air after sintering; and covering the edges of sintered ceramic sheets with outer electrode paste and baking after re-oxidation, terminals of inner electrodes being exposed to the edges, wherein: the starting material of mixed powder comprises a material of the composition Sr.sub.(1-x) Ba.sub.x TiO.sub.3 containing excess Ti to make a final molecular ratio of Ti to Sr.sub.(1-x) Ba.sub.x in the range of 0.95.ltoreq. Sr.sub.(1-x)Ba.sub.x /Ti< 1.00 (where x is in the range of 0< x.ltoreq.

Abstract: A laminated semiconductor ceramic capacitor with a grain boundary-insulated structure comprises a semiconductor ceramic block with a grain boundary-insulated structure, a plurality of Ni inner electrodes and outer electrodes, wherein the Ni inner electrodes are obtained from a paste containing a powder prepared by solubilizing at least one compound containing an atom selected from the group consisting of Li, Na and K into Ni or an Ni containing compound; the Ni inner electrodes are placed in a substantially parallel manner within the ceramic block to reach to the corresponding opposite edges of the ceramic block alternatively one by one; and the outer electrodes are electrically connected to the corresponding edges of the inner electrodes, respectively.

Abstract: The present invention provides a semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of Sr.sub.(1-x) Ba.sub.x TiO.sub.3 as a main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of ceramic capacitor together with the materials of inner electrodes was made possible in the manufacturing process. Besides a material to be made semiconductive is added to the main component of Sr.sub.(1-x) Ba.sub.x TiO.sub.3 with excess Ti, the materials of Mn-Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process, are also added to the main component.

Abstract: A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of SrTiO.sub.3 as the main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of the ceramic capacitor together with the materials of inner electrodes has been made possible in the manufacturing process. A material to be made semiconducting is added to the main component of SrTiO.sub.3 with an excess in Ti, the materials of Mn--Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process are also added to the main component.