Abstract: In a pattern writing method for writing a pattern on a substrate by the use of projection patterns output from a mirror device including two-dimensionally arranged micromirrors, exposure is implemented by ON/OFF controlling each micromirror and partly overlapping the projection patterns from the mirror device at least in a one-dimensional direction, thereby accurately controlling the exposure of intermediate amounts of light.

Abstract: A 1:1 mask and a wafer are arranged so as to be vertical. Thus, a pattern portion of the 1:1 mask does not warp at all and, therefore, even when the mask has no beam, it is not necessary to strongly stretch a pattern portion thereof. Further, a gap between the mask and the wafer can be further reduced. Since it is not necessary to strongly stretch the pattern portion of the stencil mask, a very thin membrane can be bonded to the pattern portion. Thus, even when the acceleration voltage of an electron beam is as low as several kV, it is possible to use a mask called a membrane mask and carry out pattern formation by one-time exposure even in the case of a doughnut-shaped pattern.

Abstract: In a pattern writing method for writing a pattern on a substrate by the use of projection patterns output from a mirror device including two-dimensionally arranged micromirrors, exposure is implemented by ON/OFF controlling each micromirror and partly overlapping the projection patterns from the mirror device at least in a one-dimensional direction, thereby accurately controlling the exposure of intermediate amounts of light.

Abstract: A mask repeater for transferring the pattern of a master mask onto a real mask by exposure and transferring the pattern on the real mask onto a substrate such as a semiconductor wafer. The size of the master mask is larger than that of the real mask. By using an optical system for reduction-projecting soft X-rays, a 1:1 magnification mask, which is the next generation mask, is fabricated. In a scan exposure system, the shape of a slit used for scanning is made fixed, and exposure is conducted only for the exposed region to realize oblique exposure. When the shape of the slit is a trapezoid and when the exposed region is reciprocated in the scanning direction, the number of joint exposures can be decreased.