Patents by Inventor Kimitsugu Nakamura

Kimitsugu Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340129
    Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of Al2O3. The second film is made of SiO2. The first film is thicker than the second film.
    Type: Grant
    Filed: August 9, 2016
    Date of Patent: July 2, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Takaaki Nagata, Yasumasa Hamana, Hajime Nishimura, Kimitsugu Nakamura
  • Publication number: 20180247802
    Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of Al2O3. The second film is made of SiO2. The first film is thicker than the second film.
    Type: Application
    Filed: August 9, 2016
    Publication date: August 30, 2018
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takaaki NAGATA, Yasumasa HAMANA, Hajime NISHIMURA, Kimitsugu NAKAMURA
  • Patent number: 9824844
    Abstract: A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: November 21, 2017
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Takaaki Nagata, Yasumasa Hamana, Kimitsugu Nakamura
  • Publication number: 20160233044
    Abstract: A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.
    Type: Application
    Filed: August 8, 2014
    Publication date: August 11, 2016
    Inventors: Takaaki NAGATA, Yasumasa HAMANA, Kimitsugu NAKAMURA
  • Patent number: 9299530
    Abstract: In an electron tube, an atomic layer deposition method is used to form an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers or a mixed structure of an electrically insulating material and an electrically conductive material, so as to cover the whole of an inner wall surface and an outer wall surface of a second envelope. By use of the atomic layer deposition method, the firm and fine electrical resistance film with a desired resistance can be formed on an insulation surface, without containing a material such as a binder. When the electrical resistance film is provided with slight electrical conductivity, it can suppress occurrence of withstand voltage failure due to electrification of the insulation surface or the like and realize stability of withstand voltage characteristics.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: March 29, 2016
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yasumasa Hamana, Takaaki Nagata, Kimitsugu Nakamura
  • Patent number: 9293308
    Abstract: In an electron tube, an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers is formed on holding surfaces of bases in insulating substrates. This electrical resistance film is made as a firm and fine film with a desired resistance by use of an atomic layer deposition method, which can suppress electrification of the bases comprised of an insulating material. This makes it feasible to stably maintain withstand voltage characteristics.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: March 22, 2016
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Takaaki Nagata, Yasumasa Hamana, Kimitsugu Nakamura
  • Patent number: 9257266
    Abstract: In a micro-channel plate, an electron emission film and an ion barrier film formed on a substrate are integrally formed by the same film formation step. In this structure, the electron emission film and the ion barrier film are made as continuous and firm films and the ion barrier film can be made thinner. Since the ion barrier film is formed on the back side of an organic film, the organic film is exposed during removal of the organic film. This prevents the organic film from remaining and thus suppresses degradation of performance of the ion barrier film due to the residual organic film, so as to suppress ion feedback from the micro-channel plate and achieve a sufficient improvement in life characteristics of an image intensifier.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: February 9, 2016
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kimitsugu Nakamura, Yasumasa Hamana, Takaaki Nagata
  • Publication number: 20150279639
    Abstract: In a micro-channel plate, an electron emission film and an ion barrier film formed on a substrate are integrally formed by the same film formation step. In this structure, the electron emission film and the ion barrier film are made as continuous and firm films and the ion barrier film can be made thinner. Since the ion barrier film is formed on the back side of an organic film, the organic film is exposed during removal of the organic film. This prevents the organic film from remaining and thus suppresses degradation of performance of the ion barrier film due to the residual organic film, so as to suppress ion feedback from the micro-channel plate and achieve a sufficient improvement in life characteristics of an image intensifier.
    Type: Application
    Filed: July 11, 2013
    Publication date: October 1, 2015
    Inventors: Kimitsugu Nakamura, Yasumasa Hamana, Takaaki Nagata
  • Publication number: 20150235825
    Abstract: In an electron tube, an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers is formed on holding surfaces of bases in insulating substrates. This electrical resistance film is made as a firm and fine film with a desired resistance by use of an atomic layer deposition method, which can suppress electrification of the bases comprised of an insulating material. This makes it feasible to stably maintain withstand voltage characteristics.
    Type: Application
    Filed: July 31, 2013
    Publication date: August 20, 2015
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takaaki Nagata, Yasumasa Hamana, Kimitsugu Nakamura
  • Publication number: 20150228439
    Abstract: In an electron tube, an atomic layer deposition method is used to form an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers or a mixed structure of an electrically insulating material and an electrically conductive material, so as to cover the whole of an inner wall surface and an outer wall surface of a second envelope. By use of the atomic layer deposition method, the firm and fine electrical resistance film with a desired resistance can be formed on an insulation surface, without containing a material such as a binder. When the electrical resistance film is provided with slight electrical conductivity, it can suppress occurrence of withstand voltage failure due to electrification of the insulation surface or the like and realize stability of withstand voltage characteristics.
    Type: Application
    Filed: July 31, 2013
    Publication date: August 13, 2015
    Inventors: Yasumasa Hamana, Takaaki Nagata, Kimitsugu Nakamura
  • Patent number: 8796923
    Abstract: The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: August 5, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Toshikazu Matsui, Yasumasa Hamana, Kimitsugu Nakamura, Yoshihiro Ishigami, Daijiro Oguri
  • Publication number: 20110089825
    Abstract: The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.
    Type: Application
    Filed: November 7, 2008
    Publication date: April 21, 2011
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Toshikazu Matsui, Yasumasa Hamana, Kimitsugu Nakamura, Yoshihiro Ishigami, Daijiro Oguri
  • Patent number: 7495392
    Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. The first support member is provided with a focusing electrode functioning to alter trajectories of the primary electrons, in order to guide the primary electrons to the inlet aperture. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: February 24, 2009
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
  • Patent number: 7492097
    Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode. The electron multiplication section is comprised of at least a first dynode of a box type and a second dynode having a reflection type secondary electron emission surface located so as to face the first dynode and arranged to receive secondary electrons from the first dynode and to emit secondary electrons to a side where the first dynode is located.
    Type: Grant
    Filed: March 16, 2005
    Date of Patent: February 17, 2009
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
  • Publication number: 20060164008
    Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. The first support member is provided with a focusing electrode functioning to alter trajectories of the primary electrons, in order to guide the primary electrons to the inlet aperture. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode.
    Type: Application
    Filed: July 15, 2005
    Publication date: July 27, 2006
    Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
  • Publication number: 20060164007
    Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode. The electron multiplication section is comprised of at least a first dynode of a box type and a second dynode having a reflection type secondary electron emission surface located so as to face the first dynode and arranged to receive secondary electrons from the first dynode and to emit secondary electrons to a side where the first dynode is located.
    Type: Application
    Filed: March 16, 2005
    Publication date: July 27, 2006
    Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
  • Patent number: 6381305
    Abstract: A hood electrode attached to a tip portion of a target is provided with an electron passage port widening on the side opposite from an x-ray emitting window, so that electrons emitted from an electron gun are made incident on the front end face of a target at a position on the x-ray emission side, whereby the distance between the x-ray generating position and the x-ray emitting window can be shortened.
    Type: Grant
    Filed: August 4, 2000
    Date of Patent: April 30, 2002
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tomoyuki Okada, Masuo Ito, Kimitsugu Nakamura, Yoshitoshi Ishihara, Tsutomu Nakamura, Tutomu Inazuru
  • Patent number: 5780967
    Abstract: To eliminate a distortion of an output image detected by a semiconductor device serving as an anode in an electron tube, a faceplate is configured to a planar shape and a window provided on the semiconductor device has a pincushion outer profile in which points on the outer profile of the window that correspond to points on the outer profile of the faceplate are outwardly positioned farther than the corresponding points in the outer profile of the faceplate that are apart from the center of the faceplate. Further, the window is divided into a plurality of segments to define picture elements.
    Type: Grant
    Filed: August 30, 1996
    Date of Patent: July 14, 1998
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Motohiro Suyama, Kimitsugu Nakamura, Masuo Ito
  • Patent number: 5736731
    Abstract: In a photomultiplier tube, a second dynode Dy2 is located in confrontation with a first dynode Dy1 in an electron multiplication portion 6. The second dynode Dy2 is made of material that has a secondary electron emission gain which is substantially saturated with respect to an electric voltage applied thereto.
    Type: Grant
    Filed: July 19, 1996
    Date of Patent: April 7, 1998
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hiroyuki Kyushima, Takayuki Omura, Kimitsugu Nakamura, Suenori Kimura, Yousuke Oohashi, Masuo Ito
  • Patent number: 5619099
    Abstract: Support electrodes are provided for individually supporting a plurality of dynodes arranged inside of a vessel of an electron tube, such as photomultiplier tube. A black spacer formed from a ceramic material is disposed between the support electrodes. The black spacers are formed with elemental composition having content of MnO suppressed to 3 wt % or less. Current leaks, which are the cause of dark current, and abnormal generations of light during photomultiplication can be reduced, thereby improving the signal-to-noise ratio of the electron tube.
    Type: Grant
    Filed: June 20, 1995
    Date of Patent: April 8, 1997
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Kimitsugu Nakamura, Masayoshi Sahara, Atushi Ishikawa, Chiyoshi Okuyama, Junichi Takeuchi