Patents by Inventor Kimitsugu Nakamura
Kimitsugu Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10340129Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of Al2O3. The second film is made of SiO2. The first film is thicker than the second film.Type: GrantFiled: August 9, 2016Date of Patent: July 2, 2019Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takaaki Nagata, Yasumasa Hamana, Hajime Nishimura, Kimitsugu Nakamura
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Publication number: 20180247802Abstract: A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of Al2O3. The second film is made of SiO2. The first film is thicker than the second film.Type: ApplicationFiled: August 9, 2016Publication date: August 30, 2018Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takaaki NAGATA, Yasumasa HAMANA, Hajime NISHIMURA, Kimitsugu NAKAMURA
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Patent number: 9824844Abstract: A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.Type: GrantFiled: August 8, 2014Date of Patent: November 21, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takaaki Nagata, Yasumasa Hamana, Kimitsugu Nakamura
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Publication number: 20160233044Abstract: A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.Type: ApplicationFiled: August 8, 2014Publication date: August 11, 2016Inventors: Takaaki NAGATA, Yasumasa HAMANA, Kimitsugu NAKAMURA
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Patent number: 9299530Abstract: In an electron tube, an atomic layer deposition method is used to form an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers or a mixed structure of an electrically insulating material and an electrically conductive material, so as to cover the whole of an inner wall surface and an outer wall surface of a second envelope. By use of the atomic layer deposition method, the firm and fine electrical resistance film with a desired resistance can be formed on an insulation surface, without containing a material such as a binder. When the electrical resistance film is provided with slight electrical conductivity, it can suppress occurrence of withstand voltage failure due to electrification of the insulation surface or the like and realize stability of withstand voltage characteristics.Type: GrantFiled: July 31, 2013Date of Patent: March 29, 2016Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yasumasa Hamana, Takaaki Nagata, Kimitsugu Nakamura
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Patent number: 9293308Abstract: In an electron tube, an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers is formed on holding surfaces of bases in insulating substrates. This electrical resistance film is made as a firm and fine film with a desired resistance by use of an atomic layer deposition method, which can suppress electrification of the bases comprised of an insulating material. This makes it feasible to stably maintain withstand voltage characteristics.Type: GrantFiled: July 31, 2013Date of Patent: March 22, 2016Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takaaki Nagata, Yasumasa Hamana, Kimitsugu Nakamura
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Patent number: 9257266Abstract: In a micro-channel plate, an electron emission film and an ion barrier film formed on a substrate are integrally formed by the same film formation step. In this structure, the electron emission film and the ion barrier film are made as continuous and firm films and the ion barrier film can be made thinner. Since the ion barrier film is formed on the back side of an organic film, the organic film is exposed during removal of the organic film. This prevents the organic film from remaining and thus suppresses degradation of performance of the ion barrier film due to the residual organic film, so as to suppress ion feedback from the micro-channel plate and achieve a sufficient improvement in life characteristics of an image intensifier.Type: GrantFiled: July 11, 2013Date of Patent: February 9, 2016Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Kimitsugu Nakamura, Yasumasa Hamana, Takaaki Nagata
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Publication number: 20150279639Abstract: In a micro-channel plate, an electron emission film and an ion barrier film formed on a substrate are integrally formed by the same film formation step. In this structure, the electron emission film and the ion barrier film are made as continuous and firm films and the ion barrier film can be made thinner. Since the ion barrier film is formed on the back side of an organic film, the organic film is exposed during removal of the organic film. This prevents the organic film from remaining and thus suppresses degradation of performance of the ion barrier film due to the residual organic film, so as to suppress ion feedback from the micro-channel plate and achieve a sufficient improvement in life characteristics of an image intensifier.Type: ApplicationFiled: July 11, 2013Publication date: October 1, 2015Inventors: Kimitsugu Nakamura, Yasumasa Hamana, Takaaki Nagata
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Publication number: 20150235825Abstract: In an electron tube, an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers is formed on holding surfaces of bases in insulating substrates. This electrical resistance film is made as a firm and fine film with a desired resistance by use of an atomic layer deposition method, which can suppress electrification of the bases comprised of an insulating material. This makes it feasible to stably maintain withstand voltage characteristics.Type: ApplicationFiled: July 31, 2013Publication date: August 20, 2015Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takaaki Nagata, Yasumasa Hamana, Kimitsugu Nakamura
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Publication number: 20150228439Abstract: In an electron tube, an atomic layer deposition method is used to form an electrical resistance film having a stacked structure of electrically insulating layers and electrically conductive layers or a mixed structure of an electrically insulating material and an electrically conductive material, so as to cover the whole of an inner wall surface and an outer wall surface of a second envelope. By use of the atomic layer deposition method, the firm and fine electrical resistance film with a desired resistance can be formed on an insulation surface, without containing a material such as a binder. When the electrical resistance film is provided with slight electrical conductivity, it can suppress occurrence of withstand voltage failure due to electrification of the insulation surface or the like and realize stability of withstand voltage characteristics.Type: ApplicationFiled: July 31, 2013Publication date: August 13, 2015Inventors: Yasumasa Hamana, Takaaki Nagata, Kimitsugu Nakamura
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Patent number: 8796923Abstract: The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.Type: GrantFiled: November 7, 2008Date of Patent: August 5, 2014Assignee: Hamamatsu Photonics K.K.Inventors: Toshikazu Matsui, Yasumasa Hamana, Kimitsugu Nakamura, Yoshihiro Ishigami, Daijiro Oguri
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Publication number: 20110089825Abstract: The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.Type: ApplicationFiled: November 7, 2008Publication date: April 21, 2011Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Toshikazu Matsui, Yasumasa Hamana, Kimitsugu Nakamura, Yoshihiro Ishigami, Daijiro Oguri
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Patent number: 7495392Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. The first support member is provided with a focusing electrode functioning to alter trajectories of the primary electrons, in order to guide the primary electrons to the inlet aperture. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode.Type: GrantFiled: July 15, 2005Date of Patent: February 24, 2009Assignee: Hamamatsu Photonics K.K.Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
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Patent number: 7492097Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode. The electron multiplication section is comprised of at least a first dynode of a box type and a second dynode having a reflection type secondary electron emission surface located so as to face the first dynode and arranged to receive secondary electrons from the first dynode and to emit secondary electrons to a side where the first dynode is located.Type: GrantFiled: March 16, 2005Date of Patent: February 17, 2009Assignee: Hamamatsu Photonics K.K.Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
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Publication number: 20060164007Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode. The electron multiplication section is comprised of at least a first dynode of a box type and a second dynode having a reflection type secondary electron emission surface located so as to face the first dynode and arranged to receive secondary electrons from the first dynode and to emit secondary electrons to a side where the first dynode is located.Type: ApplicationFiled: March 16, 2005Publication date: July 27, 2006Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
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Publication number: 20060164008Abstract: This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. The first support member is provided with a focusing electrode functioning to alter trajectories of the primary electrons, in order to guide the primary electrons to the inlet aperture. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode.Type: ApplicationFiled: July 15, 2005Publication date: July 27, 2006Inventors: Kimitsugu Nakamura, Yousuke Oohashi, Keiichi Ohishi, Masuo Ito
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Patent number: 6381305Abstract: A hood electrode attached to a tip portion of a target is provided with an electron passage port widening on the side opposite from an x-ray emitting window, so that electrons emitted from an electron gun are made incident on the front end face of a target at a position on the x-ray emission side, whereby the distance between the x-ray generating position and the x-ray emitting window can be shortened.Type: GrantFiled: August 4, 2000Date of Patent: April 30, 2002Assignee: Hamamatsu Photonics K.K.Inventors: Tomoyuki Okada, Masuo Ito, Kimitsugu Nakamura, Yoshitoshi Ishihara, Tsutomu Nakamura, Tutomu Inazuru
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Patent number: 5780967Abstract: To eliminate a distortion of an output image detected by a semiconductor device serving as an anode in an electron tube, a faceplate is configured to a planar shape and a window provided on the semiconductor device has a pincushion outer profile in which points on the outer profile of the window that correspond to points on the outer profile of the faceplate are outwardly positioned farther than the corresponding points in the outer profile of the faceplate that are apart from the center of the faceplate. Further, the window is divided into a plurality of segments to define picture elements.Type: GrantFiled: August 30, 1996Date of Patent: July 14, 1998Assignee: Hamamatsu Photonics K.K.Inventors: Motohiro Suyama, Kimitsugu Nakamura, Masuo Ito
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Photomultiplier tube comprising a second dynode having a saturated secondary electron emission ratio
Patent number: 5736731Abstract: In a photomultiplier tube, a second dynode Dy2 is located in confrontation with a first dynode Dy1 in an electron multiplication portion 6. The second dynode Dy2 is made of material that has a secondary electron emission gain which is substantially saturated with respect to an electric voltage applied thereto.Type: GrantFiled: July 19, 1996Date of Patent: April 7, 1998Assignee: Hamamatsu Photonics K.K.Inventors: Hiroyuki Kyushima, Takayuki Omura, Kimitsugu Nakamura, Suenori Kimura, Yousuke Oohashi, Masuo Ito -
Patent number: 5619099Abstract: Support electrodes are provided for individually supporting a plurality of dynodes arranged inside of a vessel of an electron tube, such as photomultiplier tube. A black spacer formed from a ceramic material is disposed between the support electrodes. The black spacers are formed with elemental composition having content of MnO suppressed to 3 wt % or less. Current leaks, which are the cause of dark current, and abnormal generations of light during photomultiplication can be reduced, thereby improving the signal-to-noise ratio of the electron tube.Type: GrantFiled: June 20, 1995Date of Patent: April 8, 1997Assignee: Hamamatsu Photonics K.K.Inventors: Kimitsugu Nakamura, Masayoshi Sahara, Atushi Ishikawa, Chiyoshi Okuyama, Junichi Takeuchi