Patents by Inventor Kimiya Aoki

Kimiya Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190393898
    Abstract: LDPC coding is executed using a check matrix of an LDPC code whose code length is 736 bits and whose code rate is 1/4, and modulation is executed using a repetition unit that has an LDPC code obtained by the LDPC coding, repeatedly arranged therein. The LDPC code includes information bits and parity bits, the check matrix includes an information matrix portion corresponding to the information bits and a parity matrix portion corresponding to the parity bits, the parity matrix portion has a stepwise structure, the information matrix portion is indicated by a check matrix initial value table, and the check matrix initial value table is a predetermined table indicating positions of elements of “1” of the information matrix portion for each eight columns. This technique is applicable to, for example, information transmission using the LDPC code.
    Type: Application
    Filed: February 27, 2018
    Publication date: December 26, 2019
    Applicants: Sony Semiconductor Solutions Corporation, Sony Corporation
    Inventors: Seiji KOBAYASHI, Masanori SATO, Nabil LOGHIN, Toshihiro FUJIKI, Ryoji IKEGAYA, Hiroyuki KAMATA, Yusuke YONEYAMA, Kimiya KATO, Akira ENDO, Sawako KIRIYAMA, Hiroyuki MITA, Hideshi MOTOYAMA, Hiroshi AOKI, Daisuke KAWAKAMI
  • Publication number: 20160259402
    Abstract: A contact detection apparatus detects contact of a contactor and a contacted object. The contact detection apparatus includes an imager that acquires three-dimensional imaging information of the contactor and the contacted object, a setter that sets a contact target surface based on the three-dimensional imaging information of the contacted object from the imager, a candidate detector that converts the three-dimensional imaging information of the contactor from the imager into two-dimensional information and detects an end portion candidate of the contactor based on the two-dimensional information and the contact target surface, and a contact determiner that decides an end portion of the contactor and determines the contact of the contactor and the contacted object based on the three-dimensional imaging information of the end portion candidate and the contact target surface.
    Type: Application
    Filed: February 26, 2016
    Publication date: September 8, 2016
    Inventors: Koji MASUDA, Kimiya AOKI, Yuki TACHIBANA
  • Patent number: 8122850
    Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
    Type: Grant
    Filed: July 1, 2009
    Date of Patent: February 28, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
  • Patent number: 7926445
    Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.
    Type: Grant
    Filed: September 11, 2007
    Date of Patent: April 19, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
  • Patent number: 7700156
    Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: April 20, 2010
    Assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba
    Inventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori
  • Publication number: 20090263292
    Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
    Type: Application
    Filed: July 1, 2009
    Publication date: October 22, 2009
    Inventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
  • Patent number: 7563481
    Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
    Type: Grant
    Filed: October 4, 2004
    Date of Patent: July 21, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
  • Publication number: 20080056967
    Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.
    Type: Application
    Filed: September 11, 2007
    Publication date: March 6, 2008
    Inventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
  • Patent number: 7304003
    Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.
    Type: Grant
    Filed: March 23, 2005
    Date of Patent: December 4, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
  • Publication number: 20070231484
    Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
    Type: Application
    Filed: October 4, 2004
    Publication date: October 4, 2007
    Inventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
  • Patent number: 7064084
    Abstract: To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: June 20, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Shingo Hishiya, Koji Akiyama, Yoshikazu Furusawa, Kimiya Aoki
  • Publication number: 20060003542
    Abstract: A method of oxidizing an object to be processed comprises the steps of: providing an object to be processed W having a groove 4 formed on its surface in a processing vessel 22 capable of forming a vacuum therein, oxidizing the surface of the object to be processed in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. A temperature in the processing vessel during the oxidizing step is set to be equal to or less than 900° C. Thus, not only corner portions of shoulders of a trench (groove) but also corner portions of a bottom portion of the trench can be rounded to have curved surfaces so as to prevent a generation of facet.
    Type: Application
    Filed: June 21, 2005
    Publication date: January 5, 2006
    Inventors: Keisuke Suzuki, Kimiya Aoki, Kota Umezawa, Thomas Wilhelm Matthes, Uwe Wellhausen, Norbert Dyroff
  • Publication number: 20050272269
    Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.
    Type: Application
    Filed: March 23, 2005
    Publication date: December 8, 2005
    Inventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
  • Publication number: 20050241578
    Abstract: The invention is an oxidizing method for an object to be processed, the oxidizing method including: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at the processing container, each of the plurality of objects to be processed having an exposed silicon layer and an exposed tungsten layer; an active-species forming step of supplying the oxidative gas and the reducing gas into the processing container, causing the both gases to react on each other under a reduced pressure, and generating active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the silicon layers of the plurality of objects to be processed by means of the active species.
    Type: Application
    Filed: February 17, 2005
    Publication date: November 3, 2005
    Inventors: Kimiya Aoki, Keisuke Suzuki, Toshiyuki Ikeuchi
  • Patent number: 6869892
    Abstract: A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: March 22, 2005
    Assignees: Tokyo Electron Limited, Intel Corporation
    Inventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki, David Paul Brunco, Steven Robert Soss, Anthony Dip
  • Publication number: 20050056220
    Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
    Type: Application
    Filed: June 30, 2004
    Publication date: March 17, 2005
    Inventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori
  • Publication number: 20040087180
    Abstract: To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed.
    Type: Application
    Filed: August 25, 2003
    Publication date: May 6, 2004
    Inventors: Shingo Hishiya, Koji Akiyama, Yoshikazu Furusawa, Kimiya Aoki
  • Publication number: 20020020433
    Abstract: A cleaning method cleans a reaction tube and dummy wafers by removing therefrom tungsten and tungsten compound deposited on the inner surface of the reaction tube and the surfaces of the dummy wafer in a process of selectively oxidizing the side walls of a silicon layer included in an electrode of a layered structure consisting of a polysilicon layer and a tungsten layer. The interior of the reaction tube is heated, and a cleaning gas containing hydrogen chloride gas and oxygen gas is supplied through a cleaning gas supply port into the reaction tube to remove the tungsten and the tungsten compound adhering to the inner surface of the reaction tube and the surfaces of the dummy wafers.
    Type: Application
    Filed: December 27, 2000
    Publication date: February 21, 2002
    Inventors: Asami Suemura, Kimiya Aoki
  • Patent number: 6245673
    Abstract: A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.
    Type: Grant
    Filed: August 30, 1999
    Date of Patent: June 12, 2001
    Assignee: Tokyo Electron Limited
    Inventors: Kazuya Okubo, Tsuyoshi Takahashi, Kimiya Aoki, Kimihiro Matsuse