Patents by Inventor Kimiya Aoki
Kimiya Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220139942Abstract: A semiconductor device includes an electric-charge storing film, an electrode, a first block film, and a second block film. The first block film is arranged between the electric-charge storing film and the electrode. The second block film is arranged between the first block film and the electric-charge storing film. The first block film is an oxide film containing tantalum, and an electric permittivity of the first block film is larger than an electric permittivity of the second block film.Type: ApplicationFiled: January 19, 2022Publication date: May 5, 2022Applicant: Tokyo Electron LimitedInventors: Genji NAKAMURA, Keisuke SUZUKI, Kimiya AOKI
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Publication number: 20160259402Abstract: A contact detection apparatus detects contact of a contactor and a contacted object. The contact detection apparatus includes an imager that acquires three-dimensional imaging information of the contactor and the contacted object, a setter that sets a contact target surface based on the three-dimensional imaging information of the contacted object from the imager, a candidate detector that converts the three-dimensional imaging information of the contactor from the imager into two-dimensional information and detects an end portion candidate of the contactor based on the two-dimensional information and the contact target surface, and a contact determiner that decides an end portion of the contactor and determines the contact of the contactor and the contacted object based on the three-dimensional imaging information of the end portion candidate and the contact target surface.Type: ApplicationFiled: February 26, 2016Publication date: September 8, 2016Inventors: Koji MASUDA, Kimiya AOKI, Yuki TACHIBANA
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Patent number: 8122850Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.Type: GrantFiled: July 1, 2009Date of Patent: February 28, 2012Assignee: Tokyo Electron LimitedInventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
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Patent number: 7926445Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.Type: GrantFiled: September 11, 2007Date of Patent: April 19, 2011Assignee: Tokyo Electron LimitedInventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
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Patent number: 7700156Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.Type: GrantFiled: June 30, 2004Date of Patent: April 20, 2010Assignees: Tokyo Electron Limited, Kabushiki Kaisha ToshibaInventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori
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Publication number: 20090263292Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.Type: ApplicationFiled: July 1, 2009Publication date: October 22, 2009Inventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
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Patent number: 7563481Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.Type: GrantFiled: October 4, 2004Date of Patent: July 21, 2009Assignee: Tokyo Electron LimitedInventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
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Publication number: 20080056967Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.Type: ApplicationFiled: September 11, 2007Publication date: March 6, 2008Inventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
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Patent number: 7304003Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.Type: GrantFiled: March 23, 2005Date of Patent: December 4, 2007Assignee: Tokyo Electron LimitedInventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
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Publication number: 20070231484Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.Type: ApplicationFiled: October 4, 2004Publication date: October 4, 2007Inventors: Shingo Hishiya, Kimiya Aoki, Masahisa Watanabe
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Patent number: 7064084Abstract: To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed.Type: GrantFiled: February 28, 2002Date of Patent: June 20, 2006Assignee: Tokyo Electron LimitedInventors: Shingo Hishiya, Koji Akiyama, Yoshikazu Furusawa, Kimiya Aoki
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Publication number: 20060003542Abstract: A method of oxidizing an object to be processed comprises the steps of: providing an object to be processed W having a groove 4 formed on its surface in a processing vessel 22 capable of forming a vacuum therein, oxidizing the surface of the object to be processed in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. A temperature in the processing vessel during the oxidizing step is set to be equal to or less than 900° C. Thus, not only corner portions of shoulders of a trench (groove) but also corner portions of a bottom portion of the trench can be rounded to have curved surfaces so as to prevent a generation of facet.Type: ApplicationFiled: June 21, 2005Publication date: January 5, 2006Inventors: Keisuke Suzuki, Kimiya Aoki, Kota Umezawa, Thomas Wilhelm Matthes, Uwe Wellhausen, Norbert Dyroff
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Publication number: 20050272269Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.Type: ApplicationFiled: March 23, 2005Publication date: December 8, 2005Inventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki
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Publication number: 20050241578Abstract: The invention is an oxidizing method for an object to be processed, the oxidizing method including: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at the processing container, each of the plurality of objects to be processed having an exposed silicon layer and an exposed tungsten layer; an active-species forming step of supplying the oxidative gas and the reducing gas into the processing container, causing the both gases to react on each other under a reduced pressure, and generating active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the silicon layers of the plurality of objects to be processed by means of the active species.Type: ApplicationFiled: February 17, 2005Publication date: November 3, 2005Inventors: Kimiya Aoki, Keisuke Suzuki, Toshiyuki Ikeuchi
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Patent number: 6869892Abstract: A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.Type: GrantFiled: January 30, 2004Date of Patent: March 22, 2005Assignees: Tokyo Electron Limited, Intel CorporationInventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kimiya Aoki, David Paul Brunco, Steven Robert Soss, Anthony Dip
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Publication number: 20050056220Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.Type: ApplicationFiled: June 30, 2004Publication date: March 17, 2005Inventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori
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Publication number: 20040087180Abstract: To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed.Type: ApplicationFiled: August 25, 2003Publication date: May 6, 2004Inventors: Shingo Hishiya, Koji Akiyama, Yoshikazu Furusawa, Kimiya Aoki
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Publication number: 20020020433Abstract: A cleaning method cleans a reaction tube and dummy wafers by removing therefrom tungsten and tungsten compound deposited on the inner surface of the reaction tube and the surfaces of the dummy wafer in a process of selectively oxidizing the side walls of a silicon layer included in an electrode of a layered structure consisting of a polysilicon layer and a tungsten layer. The interior of the reaction tube is heated, and a cleaning gas containing hydrogen chloride gas and oxygen gas is supplied through a cleaning gas supply port into the reaction tube to remove the tungsten and the tungsten compound adhering to the inner surface of the reaction tube and the surfaces of the dummy wafers.Type: ApplicationFiled: December 27, 2000Publication date: February 21, 2002Inventors: Asami Suemura, Kimiya Aoki
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Patent number: 6245673Abstract: A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.Type: GrantFiled: August 30, 1999Date of Patent: June 12, 2001Assignee: Tokyo Electron LimitedInventors: Kazuya Okubo, Tsuyoshi Takahashi, Kimiya Aoki, Kimihiro Matsuse