Abstract: A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

Abstract: A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

Abstract: A single crystal growth apparatus to grow a single crystal of a gallium oxide-based semiconductor. The apparatus includes a crucible that includes a seed crystal section to accommodate a seed crystal, and a growing crystal section which is located on the upper side of the seed crystal section and in which the single crystal is grown by crystallizing a raw material melt accommodated therein, a tubular susceptor surrounding the seed crystal section and also supporting the crucible from below, and a molybdenum disilicide heating element to melt a raw material in the growing crystal section to obtain the raw material melt. The susceptor includes a thick portion at a portion in a height direction that is thicker and has a shorter horizontal distance from the seed crystal section than other portions. The thick portion surrounds at least a portion of the seed crystal section in the height direction.

Abstract: A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped ?-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the ?-Ga2O3-based single crystal, a shoulder of the ?-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal which uses the EFG method and includes raising a Ga2O3 melt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the Ga2O3-based melt so as to grown a ?-Ga2O3 single crystal.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.

Abstract: Provided is a gallium oxide substrate which has less linear pits. Obtained is a gallium oxide substrate wherein the average density of linear pits in a single crystal surface is 1,000 pits/cm2 or less.

Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.

Abstract: A ?-Ga2O3-based single crystal substrate includes a ?-Ga2O3-based single crystal. The ?-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped ?-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the ?-Ga2O3-based single crystal, a shoulder of the ?-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal which uses the EFG method and includes raising a Ga2O3 melt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the Ga2O3-based melt so as to grown a ?-Ga2O3 single crystal.

Abstract: A ?-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm?2. The average dislocation density may be not more than 6.14×104 cm?2. The substrate may further include a main surface including a plane orientation of (?201), (101) or (001). The substrate may be free from any twinned crystal.

Abstract: A Ga2O3-based single crystal substrate includes a main surface including BOW of not less than ?13 ?m and not more than 0 ?m. The main surface may further include WARP of not more than 25 ?m. The main surface may further include TTV of not more than 10 ?m.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105/cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: A ?-Ga2O3-based single crystal substrate includes a ?-Ga2O3-based single crystal. The ?-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

Abstract: Provided is a semiconductor laminate structure including a Ga2O3 substrate and a nitride semiconductor layer with high crystal quality on the Ga2O3 substrate, and also provided is a semiconductor element including this semiconductor laminate structure. In one embodiment, this semiconductor laminate structure includes a ?-Ga2O3 substrate including ?-Ga2O3 crystal and a principal surface inclined from a (?201) surface to a [102] direction nd a nitride semiconductor layer including AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal formed by epitaxial crystal growth on the principal surface of the ?-Ga2O3 substrate.