Patents by Inventor Kimsam Hsieh

Kimsam Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Crystalline silicon formation apparatus
    Patent number: 9109301
    Abstract: In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: August 18, 2015
    Assignee: Sino-American Silicon Products, Inc.
    Inventors: Chung-Wen Lan, Kimsam Hsieh, Wen-Huai Yu, Bruce Hsu, Ya-Lu Tsai, Wen-Ching Hsu, Suz-Hua Ho
  • Crystalline Silicon Formation Apparatus
    Publication number: 20110142730
    Abstract: In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.
    Type: Application
    Filed: December 14, 2009
    Publication date: June 16, 2011
    Inventors: C.W. Lan, Kimsam-Hsieh, Wen-Huai Yu, Bruce Hsu, Ya-Lu Tsai, Wen-Ching Hsu, Szu-Hau Ho
  • Section forming method & construction for wafer ingot growth
    Publication number: 20070119366
    Abstract: A method and construction of growing wafer ingot by having a thermal shield disposed on an opening of a crucible, an opening approximating a polygonal contour disposed on the thermal shield to control gas current, heat conduction and heat radiation in ingot growth, an isotherm of condensation temperature in ingot growth approaching a polygonal form to grow the ingot into a form approximating the preset sectional form of a polygon for minimizing the material to be cut off in the subsequent process of slicing wafer ingot into chips.
    Type: Application
    Filed: August 24, 2006
    Publication date: May 31, 2007
    Inventors: C.W. Lan, Wen-Ching Hsu, Kimsam Hsieh, Leif Wang, Ya Ho