Abstract: A memory system includes a memory array including a plurality of memory cells, and an encoder operatively coupled to the memory array, for encoding an original data element to be programmed into the memory cells into a uniform data element in which the number of “0”s approximately equals the number of “1”s.

Abstract: A memory system includes a memory array including a plurality of memory cells, and an encoder operatively coupled to the memory array, for encoding an original data element to be programmed into the memory cells into a uniform data element in which the number of “0”s approximately equals the number of “1”s.

Abstract: A memory sensing method is provided. The memory sensing method comprises the following steps: sensing a first memory unit to obtain a first sensing result; sensing a second memory unit to obtain a second sensing result; and looking up a one-time sensing table according to the first and second sensing results to obtain an output data.

Abstract: An operating method of a storage device is provided. The operating method comprises the following steps. First, a first data is read from a target address of a first storage unit. Then, an assisting unit checks whether the target address is corresponding to a second data stored in a second storage unit. If the target address is corresponding to the second data, the assisting unit updates the first data according to the second data to generate an updated data. Next, an Error Correction Code (ECC) performs a decoding process on the updated data to generate a decoded data.

Abstract: Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.

Abstract: A memory sensing method is provided. The memory sensing method comprises the following steps: sensing a first memory unit to obtain a first sensing result; sensing a second memory unit to obtain a second sensing result; and looking up a one-time sensing table according to the first and second sensing results to obtain an output data.

Abstract: An operating method of a storage device is provided. The operating method comprises the following steps. First, a first data is read from a target address of a first storage unit. Then, an assisting unit checks whether the target address is corresponding to a second data stored in a second storage unit. If the target address is corresponding to the second data, the assisting unit updates the first data according to the second data to generate an updated data. Next, an Error Correction Code (ECC) performs a decoding process on the updated data to generate a decoded data.

Abstract: Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.