Abstract: Vapor phase waste species are removed from effluent gas streams using a plasma extraction reactor comprising a pair of parallel, spaced-apart electrodes. The electrodes are driven under conditions, usually at radio frequency, to induce a glow discharge in the waste species, and the excited species are deposited directly on the electrode surface. By providing a very high ratio of electrode area to reactor volume and waste gas volumetric flow rate, substantially complete removal of the waste species can be effected. The system is particularly useful in removing contaminant species discharged from semiconductor processing operations, such as chemical vapor deposition and plasma etching. The method and system are particularly advantageous in that the vapor phase waste products are converted to a solid phase deposited directly on the electrodes which may then be disposed of.

Abstract: Described is a method for producing semiconductor heterostructures incorporating a metal layer. The metal layer, typically a metal-silicide, can be produced by, e.g., co-deposition or reaction with the substrate. The resulting silicide is typically epitaxial and of high crystalline perfection.

Abstract: Described are semiconductor heterostructures incorporating a metal layer. Devices based on the heterostructures are described, as are techniques for preparing the heterostructures. Specific embodiments wherein the metal layer is a metal silicide are detailed, and hot electron devices using this structure are analyzed briefly.