Patents by Inventor Kin-Fu Kao

Kin-Fu Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • QUATERNARY GALLIUM TELLURIUM ANTIMONY (M-GaTeSb) BASED PHASE CHANGE MEMORY DEVICES
    Publication number: 20120181499
    Abstract: A phase change material comprising a quaternary GaTeSb material consisting essentially of MA(GaxTeySbz)B, and where M comprises a group IVA element C, Si, Ge, Sn, Pb, a group VA element N, P, As, Sb, Bi, or a group VIA element O, S, Se, Te, Po, having a value A such that the transition temperature is increased relative to the transition temperature in GaxTeySbz, without M, and the difference between the melting temperature and the transition temperature is reduced relative to the difference in GaxTeySbz, without M.
    Type: Application
    Filed: March 14, 2011
    Publication date: July 19, 2012
    Applicant: Macronix International Co., Ltd.
    Inventors: Tung-Hua Chuang, Yi-Chou Chen, Tsung-Shune Chin, Kin-Fu Kao, Po-Chin Chang, Yung-Ching Chu