Abstract: MIM capacitors that are temperature and/or voltage independent, and a methodology for formulating the MIM capacitors for use in semiconductor integrated circuits, is provided. Vertical MIM capacitive structures include at least two vertically separated electrodes and a capacitor dielectric that includes portions of different dielectric materials provided in a desired area ratio. The disclosure provided for selecting dielectrics and dielectric thicknesses, determining an area ratio that produces temperature and/or voltage independent MIM capacitors, and forming capacitive devices with the desired area ratio. In one embodiment, the capacitor dielectric includes at least one SiO dielectric portion and at least one SiN dielectric portion and a total capacitive area includes the SiN and SiO dielectric portions arranged such that the ratio of the area of the SiO portions to the area of the SiN portions is about 1.15:1.

Abstract: A split-gate flash cell device and method for forming the same are not provided. The split-gate flash cell device includes a floating gate transistor. The floating gate transistor includes a floating gate and a control gate disposed over at least a portion of the floating gate, along a side of the floating gate and over a portion of the substrate adjacent the floating gate. The control gate includes a portion of SiGe material. In some embodiments, the control gate is a composite material with a lower SiGe layer and an upper material layer. The upper material layer is polysilicon or other suitable materials.

Abstract: MIM capacitors that are temperature and/or voltage independent, and a methodology for formulating the MIM capacitors for use in semiconductor integrated circuits, is provided. Vertical MIM capacitive structures include at least two vertically separated electrodes and a capacitor dielectric that includes portions of different dielectric materials provided in a desired area ratio. The disclosure provided for selecting dielectrics and dielectric thicknesses, determining an area ratio that produces temperature and/or voltage independent MIM capacitors, and forming capacitive devices with the desired area ratio. In one embodiment, the capacitor dielectric includes at least one SiO dielectric portion and at least one SiN dielectric portion and a total capacitive area includes the SiN and SiO dielectric portions arranged such that the ratio of the area of the SiO portions to the area of the SiN portions is about 1.15:1.