Patents by Inventor Kin L. Tan

Kin L. Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High power pseudomorphic gallium arsenide high electron mobility transistors
    Patent number: 5262660
    Abstract: A high power pseudomorphic (PM) AlGaAs/InGaAs high electron mobility transistor (HEMT) (26) with improved gain at 94 GHz. The transistor (26) includes an InGaAs quantum well (32) having a silicon planar doping layer (34) located at the bottom. A donor layer (36) comprises AlGaAs with a silicon planar doping layer (37). The resulting transistor (26) exhibits superior gain and noise characteristics that relatively high power levels when operating at 94 GHz. The transistor (26) is produced using an optimized growth process which involves growing the quantum well at a relatively low temperature and then raising the temperature to grow subsequent layers.
    Type: Grant
    Filed: August 1, 1991
    Date of Patent: November 16, 1993
    Assignee: TRW Inc.
    Inventors: Dwight C. Streit, Kin L. Tan, Po-Hsin Liu