Patents by Inventor Kin On Johnny Sin

Kin On Johnny Sin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9559158
    Abstract: An integrated capacitor can be fabricated with both electrodes formed by trenches for low resistance. According to one embodiment, the capacitor can comprise a first trench electrode, one or more dielectric layers, and a second trench electrode. The first trench electrode and the second trench electrode can be fabricated in different trenches to improve capacitance density and resistance of the integrated capacitor.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: January 31, 2017
    Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Kin On Johnny Sin, Rongxiang Wu, Xiangming Fang
  • Publication number: 20160204189
    Abstract: An integrated capacitor can be fabricated with both electrodes formed by trenches for low resistance. According to one embodiment, the capacitor can comprise a first trench electrode, one or more dielectric layers, and a second trench electrode. The first trench electrode and the second trench electrode can be fabricated in different trenches to improve capacitance density and resistance of the integrated capacitor.
    Type: Application
    Filed: January 8, 2016
    Publication date: July 14, 2016
    Inventors: Kin On Johnny Sin, Rongxiang Wu, Xiangming Fang
  • Patent number: 7126197
    Abstract: A method of forming a power MOSFET having a substrate of a first conductivity type and a body region of a second conductivity type. The method includes the steps of forming a gate region of a pre-determined pattern and with a plurality of gate elements partially covering the substrate. The gate element has a stepped cross-sectional profile with a thicker portion and a thinner portion. The thicker portion is adapted to substantially prevent passage of impurities therethrough into the substrate during the impurities implantation step. The thinner portion is adapted to allow partial passage of impurities therethrough during the impurities implantation step. Impurities are implanted into the substrate from the gate region side of the substrate to form a body region of the second conductivity type.
    Type: Grant
    Filed: May 13, 2004
    Date of Patent: October 24, 2006
    Inventors: Kin On Johnny Sin, Mau Lam Tommy Lai
  • Patent number: 6208206
    Abstract: A three stage amplifier is disclosed provided with a novel frequency compensation technique. Only a single feedback loop with a single compensation capacitance is provided. Instead of a conventional nested compensation technique, damping factor control is provided by means of a fourth gain stage in order to stabilize the amplifier. The resulting amplifier is particularly useful to drive large capacitive loads for low-voltage low-power applications.
    Type: Grant
    Filed: February 11, 1999
    Date of Patent: March 27, 2001
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Ka Nang Leung, Kwok Tai Philip Mok, Wing Hung Ki, Kin On Johnny Sin
  • Patent number: 6172466
    Abstract: A method and apparatus are disclosed for the dimming control of a fluorescent lamp driven by an electronic ballast. A small portion (eg less than 15°) of the phase of the input supply voltage is removed, and the precise amount of the phase removed is used to generate a switching signal that controls the switching frequency of the electronic ballast and hence the light power output. The switching frequency is generated by producing pulses of a width proportional to the amount of phase removed, integrating the pulses to produce a voltage proportional to the phase removed, converting that voltage to a current that varies with a frequency depending on the voltage, and using that varying current to generate the switching frequency.
    Type: Grant
    Filed: February 12, 1999
    Date of Patent: January 9, 2001
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Wing Hung Ki, Kwok Tai Philip Mok, Kin On Johnny Sin