Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.

Abstract: An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.

Abstract: An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.

Abstract: An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.

Abstract: The present invention relates to a single crystal copper having [100] orientation and a volume of 0.1˜4.0×106 ?m3. The present invention further provides a manufacturing method for the single crystal copper and a substrate comprising the same.

Abstract: The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one thin layer of solder is deposited onto the layer of metal pad, and then carry out reflowing process; and (ii) further depositing a bump of solder with an appropriate thickness on the substrate element, characterized in that a thin intermetallic compound is formed by the reaction of the thin solder layer and the metal in the metal pad after appropriate heat treatment of the thin solder layer. In the present invention, the formation of a thin intermetallic compound is able to slow the growth of the intermetallic compound and to prevent the transformation of the intermetallic compounds.

Abstract: The present invention relates to a specimen box for an electron microscope, which comprises a first substrate, a second substrate, and a metal adhesion layer. The first substrate has a first surface, a second surface, a first concave, and one or more first through holes, wherein the first through hole penetrates through the first substrate. The second substrate has a third surface, a forth surface, and a second concave. Besides, the metal adhesion layer is disposed between the first substrate and the second substrate to form a space for a specimen placed therein. In addition, the specimen box of the present invention further comprises one or more plugs. When the plug is assembled into the first through hole to seal the specimen box, the in-situ observation can be accomplished by using an electron microscope.

Abstract: The present invention relates to a specimen box for an electron microscope, comprising a first substrate, a second substrate, one or more photoelectric elements, and a metal adhesion layer. The first substrate has a first surface, a second surface, a first concave, and one or more first through holes, wherein the first through holes penetrate through the first substrate. The second substrate has a third surface, a forth surface, and a second concave. The photoelectric element is disposed between the first substrate and the second substrate. In addition, the metal adhesion layer is disposed between the first substrate and the second substrate to form a space for a specimen contained therein. Besides, the present specimen box further comprises one or more plugs. When the plugs are assembled into the first through holes to seal the specimen box, the in-situ observation can be accomplished by using the electron microscope.

Abstract: The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one thin layer of solder is deposited onto the layer of metal pad, and then carry out reflowing process; and (ii) further depositing a bump of solder with an appropriate thickness on the substrate element, characterized in that a thin intermetallic compound is formed by the reaction of the thin solder layer and the metal in the metal pad after appropriate heat treatment of the thin solder layer. In the present invention, the formation of a thin intermetallic compound is able to slow the growth of the intermetallic compound and to prevent the transformation of the intermetallic compounds.

Abstract: The present invention relates to a specimen box for an electron microscope, which comprises a first substrate, a second substrate, and a metal adhesion layer. The first substrate has a first surface, a second surface, a first concave, and one or more first through holes, wherein the first through hole penetrates through the first substrate. The second substrate has a third surface, a forth surface, and a second concave. Besides, the metal adhesion layer is disposed between the first substrate and the second substrate to form a space for a specimen placed therein. In addition, the specimen box of the present invention further comprises one or more plugs. When the plug is assembled into the first through hole to seal the specimen box, the in-situ observation can be accomplished by using an electron microscope.

Abstract: The present invention relates to a specimen box for an electron microscope, comprising a first substrate, a second substrate, one or more photoelectric elements, and a metal adhesion layer. The first substrate has a first surface, a second surface, a first concave, and one or more first through holes, wherein the first through holes penetrate through the first substrate. The second substrate has a third surface, a forth surface, and a second concave. The photoelectric element is disposed between the first substrate and the second substrate. In addition, the metal adhesion layer is disposed between the first substrate and the second substrate to form a space for a specimen contained therein. Besides, the present specimen box further comprises one or more plugs. When the plugs are assembled into the first through holes to seal the specimen box, the in-situ observation can be accomplished by using the electron microscope.

Abstract: Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.

Abstract: Devices for fabricating oriented polymer fibers, and methods for fabricating thereof by electropulling, are provided.

Abstract: Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.

Abstract: An electrical lead for an electronic device has a core conductor and a finishing layer of a Sn alloy deposited on a surface of the core conductor of the electrical lead. The finishing layer of the Sn alloy deposited on the surface of the core conductor is of a chemical composition that hinders the formation of Sn whiskers. An electronic device has such an electrical lead.

Abstract: Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.

Abstract: The present invention is a method of fabricating a self-peeling nickel foil from a silicon wafer. The method includes forming a template of silicon by electrochemically etching a portion of the Si wafer to create a porous Si portion with pores of a desired depth. Then electrolessly plating nickel into the template, wherein the porous silicon portion is converted into a porous nickel portion and continuing the electroless plating until the internal tensile stress at an interface of the porous nickel portion and the silicon wafer is great enough to self-peel the porous nickel portion from the silicon wafer creating a nickel foil.

Abstract: This invention provides a process for protecting solder joints, comprising forming an UBM or pad metallurgy in solder joints and then further forming a small solder bump on UBM or pad metallurgy between substrate and chip. Wherein a material of high electric resistance is coated at the ends of UBM or pad metallurgy where substrate is connected to chip, as to equalize the current distribution of solder bump, therefore the electromigration resistance of solder joints is improved by suppressing the current crowding and joule heating phenomenon.

Abstract: Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.

Abstract: An improved dielectric material having pores formed therein and a method for forming the material are disclosed. The material is formed of a polymer. Pores within the polymer are formed by forming solid organic particles within the polymer and eventually vaporizing the particles to form pores within the polymer.