Abstract: A display system is disclosed. The display system comprises a display device; and a computing device. The computing device executes instructions to receive a first plurality of sub-pixel values of a first plurality of sub-pixels of an image. The first plurality of sub-pixels have a plurality of colors. The computing device further executes instructions to select a first sub-pixel of the first plurality of sub-pixels. The first sub-pixel has a first color and is spatially close to a second sub-pixel of the first plurality of sub-pixels. The second sub-pixel has the first color. The computing device further executes instructions to generate a second plurality of sub-pixel values of a second plurality of sub-pixels based on at least first and second sub-pixel values corresponding to the first and second sub-pixels of the first plurality of sub-pixels.

Abstract: A semiconductor device is provided. A first semiconductor layer is disposed on a substrate and has a channel region and two doped regions beside the channel region. A first dielectric layer is disposed on the substrate and covers the first semiconductor layer. A gate is disposed on the first dielectric layer and corresponds to the channel region of the first semiconductor layer. A second dielectric layer is disposed on the first dielectric layer and covers the gate. A second semiconductor layer is disposed on the second dielectric layer and corresponds to the gate. The boundary of the second semiconductor layer does not exceed that of the gate. At least one first conductive plug penetrates through the first and second dielectric layers and contacts one doped region of the first semiconductor layer. At least one contact contacts the second semiconductor layer. A method of forming a semiconductor device is also provided.

Abstract: A display system is disclosed. The display system comprises a display device; and a computing device. The computing device executes instructions to receive a first plurality of sub-pixel values of a first plurality of sub-pixels of an image. The first plurality of sub-pixels have a plurality of colors. The computing device further executes instructions to select a first sub-pixel of the first plurality of sub-pixels. The first sub-pixel has a first color and is spatially close to a second sub-pixel of the first plurality of sub-pixels. The second sub-pixel has the first color. The computing device further executes instructions to generate a second plurality of sub-pixel values of a second plurality of sub-pixels based on at least first and second sub-pixel values corresponding to the first and second sub-pixels of the first plurality of sub-pixels.

Abstract: An organic light emitting display (OLED) pixel structure is provided to improve the resolution of an OLED without significantly changing the current OLED manufacturing process. With a novel pixel arrangement and circuit layout, an organic light emitting material is evaporated onto a substrate through a mask and thus a plurality of sub-pixels are formed simultaneously while enabling each sub-pixel to correspond to different pixels. Therefore, the area of each sub-pixel is reduced and the resolution of a display is increased.

Abstract: An organic light emitting display (OLED) pixel structure and a method for manufacturing the same, which can be applied for improving the resolution of an OLED without significantly changing the current OLED manufacturing process. With a novel pixel arrangement and circuit layout, an organic light emitting material is evaporated onto a substrate through a mask and thus a plurality of sub-pixels are formed simultaneously while enabling each sub-pixel to correspond to different pixels. Thereby, the area of each sub-pixel is reduced and the resolution of a display is increased.

Abstract: An organic light emitting display (OLED) pixel structure is provided to improve the resolution of an OLED without significantly changing the current OLED manufacturing process. With a novel pixel arrangement and circuit layout, an organic light emitting material is evaporated onto a substrate through a mask and thus a plurality of sub-pixels are formed simultaneously while enabling each sub-pixel to correspond to different pixels. Therefore, the area of each sub-pixel is reduced and the resolution of a display is increased.

Abstract: A flat display panel is provided. The flat display panel includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels arranged in an (m×n) array, in which both m and n are integers greater than 2. Each of the pixels includes four sub-pixels arranged in a (2×2) array. In each of the pixels, the sub-pixels are connected with one of the scan lines and one of the data lines correspondingly, and display different color lights, respectively. In any four pixels arranged in a (2×2) array, the four sub-pixels located at the center area display the same color light.

Abstract: A thin film transistor device with high symmetry is disclosed, in which the symmetrical structure of transistor is utilized to enable currents flowing in the channels of each transistor formed on a polysilicon film of a specific crystallization direction to pass the same amount of grain boundaries, thereby improving the uniformity of electrical characteristics of the device. By the thin film transistor device of the invention, not only the freedom of circuit design is increased, but also the circuit area of a TFT device occupied is reduced.

Abstract: An organic light emitting display (OLED) pixel structure and a method for manufacturing the same, which can be applied for improving the resolution of an OLED without significantly changing the current OLED manufacturing process. With a novel pixel arrangement and circuit layout, an organic light emitting material is evaporated onto a substrate through a mask and thus a plurality of sub-pixels are formed simultaneously while enabling each sub-pixel to correspond to different pixels. Thereby, the area of each sub-pixel is reduced and the resolution of a display is increased.

Abstract: A thin film transistor device with high symmetry is disclosed, in which the symmetrical structure of transistor is utilized to enable currents flowing in the channels of each transistor formed on a polysilicon film of a specific crystallization direction to pass the same amount of grain boundaries, thereby improving the uniformity of electrical characteristics of the device. By the thin film transistor device of the invention, not only the freedom of circuit design is increased, but also the circuit area of a TFT device occupied is reduced.

Abstract: The present invention relates to an organic light-emitting device with an integrated color filter and a method for manufacturing the same. The organic light-emitting device is manufactured with a metal layer depositing process for raising the source/drain layer so that the sidewall area of a pixel electrode formed in a contact hole is reduced and thus the contact resistance of the pixel electrode is decreased for reducing power loss. Moreover, since the sidewall of the contact hole formed by the method of the invention is not overly abrupt, the breaking or cracking of the portion of the pixel electrode formed in the contact hole can be prevented.