Patents by Inventor Kinichi Mizuno

Kinichi Mizuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and device for cutting wire formed on semiconductor substrate
    Patent number: 7037732
    Abstract: Method and device for cutting a wire with a small number of processing operations. The method includes forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire. The method further includes forming a clear region continuously from the cut portion by scanning the semiconductor substrate with the focused ion beam. The clear region is free of stray material of the wire.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: May 2, 2006
    Assignee: Fujitsu Limited
    Inventors: Yukio Maruta, Kinichi Mizuno
  • METHOD AND DEVICE FOR CUTTING WIRE FORMED ON SEMICONDUCTOR SUBSTRATE
    Publication number: 20050085088
    Abstract: Method and device for cutting a wire with a small number of processing operations. The method includes forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire. The method further includes forming a clear region continuously from the cut portion by scanning the semiconductor substrate with the focused ion beam. The clear region is free of stray material of the wire.
    Type: Application
    Filed: March 12, 2004
    Publication date: April 21, 2005
    Applicant: FUJITSU LIMITED
    Inventors: Yukio MARUTA, Kinichi MIZUNO
  • Process for producing dimethyl formamide
    Patent number: 4224243
    Abstract: Dimethyl formamide with a high purity is produced in a high yield and a high selectivity by reaction of a mixture of monomethylamine and/or monomethyl formamide and trimethylamine, or the mixture further containing dimethylamine with carbon monoxide in the presence of metallic iron or an iron compound as a catalyst and hydrogen gas at a volumic rate of H.sub.2 /CO of 0.05-3.
    Type: Grant
    Filed: June 18, 1979
    Date of Patent: September 23, 1980
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Tetsuo Aoyama, Shigeru Horie, Kozo Sano, Hidetaka Kiga, Kinichi Mizuno, Takeo Ikarashi
  • Process for producing dimethylformamide
    Patent number: 4218398
    Abstract: Dimethylformamide mg.multidot.produced by reaction of monomethylamine and trimethylamine at a molar ratio of trimethylamine to monomethylamine of 0.1-10, with carbon monoxide in the presence of 1-500 mg. atom of at least one of iodine, bromine, iodides and bromides as a catalyst in term of halogen per one mole of raw material methylamines at a temperature of 100.degree.-350.degree. C. under a pressure of at least 50 kg/cm.sup.2 gage. Dimethylformamide is produced in a very high yield with a high selectivity from monomethylamine and trimethylamine having less demand among three species of methylamines formed from methanol and ammonia.
    Type: Grant
    Filed: December 22, 1978
    Date of Patent: August 19, 1980
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masao Saito, Kinichi Mizuno, Yuzi Onda, Tetsuo Aoyama, Kumiko Kato
  • Process for producing dimethyl formamide
    Patent number: 4094905
    Abstract: Dimethyl formamide is produced in high yield with high selectivity by reaction of monomethyl formamide with trimethylamine and carbon monoxide in the presence of a catalyst such as halogen elements, halides, inorganic acids, solid acids and metal carbonyls at a temperature of 150.degree. to 300.degree. C under a pressure of 20 kg/cm.sup.2 gage or higher.
    Type: Grant
    Filed: June 1, 1977
    Date of Patent: June 13, 1978
    Assignee: Mitsubishi Gas Chemical Company, Ltd
    Inventors: Kinichi Mizuno, Masao Saito, Yuzi Onda, Tetsuo Aoyama, Kumiko Kato