Abstract: A pair of box-like device halves are molded from polyethylene terephthalate or like elastic material. Each device half has a horizontal edge wall having a protuberance and a recess, and also raised guides and recessed guides, and it also has a downwardly convex semiconductor accommodation wall formed between its opposite side walls for accommodating semiconductor crystal. The device half further has legs extending to a greater extent than the arcuate sectional profile outer surface of the semiconductor accommodation wall. Semiconductor crystal is set in one of the device halves, which is then covered by the other device half such that the raised guides and recessed guides of the two device halves engage one another and that the protuberances and recesses engage one another. The semiconductor crystal is thus accommodated in the device halves such that it is pushed by the elastic forces of the semiconductor accommodation walls.