Abstract: Alignment of a mask with a projection-type exposing apparatus and alignment of the mask with a substrate are provided. Plural exposure areas of the substrate are exposed by light of a predetermined wavelength, which is also used for alignment purposes to reduce alignment error due to aberration of a projection optical system. A first alignment mark is disposed in a first area between adjacent exposure areas of the substrate. The mask has a main area, a second area in which a second mark is disposed, and a third area in which a third mark is disposed, the second area being outside of the main area and the third area being inside the second area. An illuminating device has a first status in which the second and third areas are illuminated simultaneously and has a second status in which the third area is illuminated, a first area adjacent to one of the exposure areas also being illuminated when the illuminating device has the second status.

Abstract: A projection type exposing apparatus includes a projection objective for projecting the image of a reticle having a predetermined pattern and a plurality of alignment marks onto a wafer, photoelectric alignment means having an imaging optical system for forming the images of the alignment marks on the reticle, a photoelectric detecting slit member disposed at a predetermined image position of the imaging optical system, and a slit image displacing optical member disposed in the optical path of the imaging optical system to optically displace the image position of the slit member on the reticle in a direction perpendicular to the lengthwise direction of the slit member, the slit member being designed such that the lengthwise direction thereof is coincident with a straight line intersecting the optic axis of the projection objective on the reticle, a movable stage for supporting the wafer thereon for movement relative to the projection objective, and a reference index mark member provided on the movable stage t