Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Abstract: A cleaning apparatus and a cleaning method for cleaning a object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Abstract: A cleaning apparatus and a cleaning method for cleaning a object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: In a cleaning apparatus for substrates, such as semiconductor wafers, a permeable core member 68 made of a synthetic resin is supplied with distilled water from a distilled water supply path 60 within a head portion 66 of a cleaning tool 24. A planar portion 72 is provided on the lower surface of the core member 68 and a porous resin sheet 69 is attached to the outer surface of the core member 68, to cover it. The cleaning tool 24 is provided with an air bearing cylinder 30 that imparts a vertical driving force to a rod 31 that presses against the surface of a wafer W which is being rotated, and the distilled water supply path 60 is provided within the rod 31. The distilled water supplied from the distilled water supply path 60 permeates through the core member 68 and the porous resin sheet 69 and is sent out of the head 66 so that a flowing film of distilled water is formed on the surface of the wafer W. Thus contamination and damage of the substrate is prevented and the shape of the head is not destroyed.

Abstract: A method for cleaning an object to be processed in which the atmosphere in a drying chamber is replaced by an inert gas prior to placing an object to be cleaned from an external environment into the chamber. The object is then transported by an elongated retaining member from the drying chamber through a lower opening in the chamber into a processing bath disposed below the chamber. The object is then cleaned in the processing bath. The object is then transported from the processing bath to the drying chamber where it is dried by filling the atmosphere of the drying chamber with organic solvent. The cleaning process in the cleaning bath is carried out while the bath is screened by a nitrogen-gas curtain. The method also includes opening a lid of the chamber prior to insertion of the object into the chamber and closing the lid after insertion of the object, as well as the opening and closing of the lower opening in the chamber.

Abstract: A cleaning apparatus and a cleaning method for cleaning an object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through a slide door 72. In the cleaning method, a drying process and a cleaning process are carried out separately on condition that the space in the drying chamber 42 is insulated from the space of the cleaning bath 41 through the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A method for cleaning an object to be processed in which the atmosphere in a drying chamber is replaced by an inert gas prior to placing an object to be cleaned from an external environment into the chamber. The object is then transported by an elongated retaining member from the drying chamber through a lower opening in the chamber into a processing bath disposed below the chamber. The object is then cleaned in the processing bath. The object is then transported from the processing bath to the drying chamber where it is dried by filling the atmosphere of the drying chamber with organic solvent. The cleaning process in the cleaning bath is carried out while the bath is screened by a nitrogen-gas curtain. The method also includes opening a lid of the chamber prior to insertion of the object into the chamber and closing the lid after insertion of the object, as well as the opening and closing of the lower opening in the chamber.

Abstract: A cleaning apparatus and a cleaning method for cleaning an object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A method for cleaning an object to be processed in which the atmosphere in a drying chamber is replaced by an inert gas prior to placing an object to be cleaned from an external environment into the chamber. The object is then transported by an elongated retaining member from the drying chamber through a lower opening in the chamber into a processing bath disposed below the chamber. The object is then cleaned in the processing bath. The object is then transported from the processing bath to the drying chamber where it is dried by filling the atmosphere of the drying chamber with organic solvent. The cleaning process in the cleaning bath is carried out while the bath is screened by a nitrogen-gas curtain. The method also includes opening a lid of the chamber prior to insertion of the object into the chamber and closing the lid after insertion of the object, as well as the opening and closing of the lower opening in the chamber.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: The purpose of the present invention is to provide a cleaning apparatus and a cleaning method which can prevent the object to be processed being subjected to a bad influence caused by a chemical treatment, have a high degree of freedom in designing the apparatus, make the cleaning process rapid and be designed in smaller size. In this cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 by a nitrogen-gas curtain 59c and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while screening it by the nitrogen-gas curtain 59c. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72.

Abstract: A cleaning apparatus and a cleaning method for cleaning an object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: A cleaning apparatus and a cleaning method for restricting an occurrence of water marks on a surface of a object to be processed are provided. The cleaning apparatus is constructed so as to dry wafers W, which have been rinsed by DIW in a drying chamber 42, in a cooling system. Thus, the reaction between, for example, IPA, DIW etc. and silicon in surfaces of the wafers W is inactivated to cause the surfaces to be oxidized with difficulty, so that it is possible to restrict the occurrence of the water marks on the surfaces.

Abstract: Disclosed is a method of washing substrates, comprising the steps of (a) introducing a washing solution into a processing vessel having a wafer boat movably mounted therein to fill the vessel with the washing solution, (b) allowing a plurality of wafers to be held collectively by chuck such that the wafers held by the chuck are arranged at substantially an equal pitch, (c) dipping the wafers together with the chuck in the washing solution within the processing vessel, (d) transferring the wafers from the chuck onto the wafer boat in an upper region of the processing vessel, (e) moving the wafers together with the wafer boat within the washing solution to allow the substrates to be positioned in a lower region of the processing vessel, (f) discharging the washing solution from the upper region of the processing vessel, (g) supplying a fresh washing solution into the lower region of the processing vessel so as to cause the washing solution within the processing vessel to overflow the processing vessel, (h) taki