Patents by Inventor Kiok Boone Elgin Quek
Kiok Boone Elgin Quek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11967664Abstract: The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs).Type: GrantFiled: April 20, 2022Date of Patent: April 23, 2024Assignee: GlobalFoundries Singapore Pte. Ltd.Inventors: Ping Zheng, Eng Huat Toh, Cancan Wu, Kiok Boone Elgin Quek
-
Publication number: 20240088173Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a single-photon avalanche diode with isolated junctions and methods of manufacture. The structure includes a first p-n junction in a semiconductor material; and a second p-n junction in a second semiconductor material isolated from the first p-n junction by a buried insulator layer.Type: ApplicationFiled: September 13, 2022Publication date: March 14, 2024Inventors: Xinshu CAI, Shyue Seng TAN, Eng Huat TOH, Kiok Boone Elgin QUEK
-
Publication number: 20230395619Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.Type: ApplicationFiled: August 22, 2023Publication date: December 7, 2023Inventors: Ping Zheng, Eng Huat Toh, Kiok Boone Elgin Quek, Kien Seen Daniel Chong, Jing Hua Michelle Tng
-
Publication number: 20230361236Abstract: A structure includes a photodetector including alternating p-type semiconductor layers and n-type semiconductor layers in contact with each other in a stack. Each semiconductor layer includes an extension extending beyond an end of an adjacent semiconductor layer of the alternating p-type semiconductor layers and n-type semiconductor layers. The extensions provide an area for operative coupling to a contact. The extensions can be arranged in a cascading, staircase arrangement, or may extend from n-type semiconductor layers on one side of the stack and from p-type semiconductor layers on another side of the stack. The photodetector can be on a substrate in a first region, and a complementary metal-oxide semiconductor (CMOS) device may be on the substrate on a second region separated from the first region by a trench isolation. The photodetector is capable of detecting and converting near-infrared (NIR) light, e.g., having wavelengths of greater than 0.75 micrometers.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Inventors: Xinshu Cai, Yongshun Sun, Kiok Boone Elgin Quek, Khee Yong Lim, Shyue Seng Tan, Eng Huat Toh, Thanh Hoa Phung, Cancan Wu
-
Publication number: 20230343886Abstract: The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs).Type: ApplicationFiled: April 20, 2022Publication date: October 26, 2023Inventors: PING ZHENG, ENG HUAT TOH, CANCAN WU, KIOK BOONE ELGIN QUEK
-
Patent number: 11784196Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.Type: GrantFiled: May 4, 2021Date of Patent: October 10, 2023Assignee: GlobalFoundries Singapore Pte. Ltd.Inventors: Ping Zheng, Eng Huat Toh, Kiok Boone Elgin Quek, Kien Seen Daniel Chong, Jing Hua Michelle Tng
-
Patent number: 11774402Abstract: According to various embodiments, there is provided a sensor device that includes: a substrate and two semiconductor structures. Each semiconductor structure includes a source region and a drain region at least partially disposed within the substrate, a channel region between the source region and the drain region, and a gate region. A first semiconductor structure of the two semiconductor structures further includes a sensing element electrically connected to the first gate structure. The sensing element is configured to receive a solution. The drain regions of the two semiconductor structures are electrically coupled. The source regions of the two semiconductor structures are also electrically coupled. A mobility of charge carriers of the channel region of a second semiconductor structure of the two semiconductor structures is lower than a mobility of charge carriers of the channel region of the first semiconductor structure.Type: GrantFiled: March 21, 2022Date of Patent: October 3, 2023Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Lanxiang Wang, Bin Liu, Eng Huat Toh, Shyue Seng Tan, Kiok Boone Elgin Quek
-
Patent number: 11659709Abstract: A nonvolatile memory device is provided. The nonvolatile memory device comprises an active region surrounded by an isolation structure. A floating gate may be arranged over the active region, the floating gate having a first end and a second end over the isolation structure. A first doped region may be provided in the active region adjacent to a first side of the floating gate and a second doped region may be provided in the active region adjacent to a second side of the floating gate. A first capacitor may be provided over the floating gate, whereby a first electrode of the first capacitor is electrically coupled to the floating gate. A second capacitor may be provided, whereby a first electrode of the second capacitor is over the isolation structure and adjacent to the floating gate.Type: GrantFiled: August 21, 2020Date of Patent: May 23, 2023Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Xinshu Cai, Shyue Seng Tan, Juan Boon Tan, Kiok Boone Elgin Quek, Eng Huat Toh
-
Publication number: 20230131505Abstract: Structures for a photodetector and methods of forming a structure for a photodetector. The structure includes a semiconductor layer having a p-n junction and a deep trench isolation region extending through the semiconductor layer. The deep trench isolation region includes first layers and second layers that alternate with the first layers to define a Bragg mirror. The first layers contain a first material having a first refractive index, and the second layers contain a second material having a second refractive index that is greater than the first refractive index.Type: ApplicationFiled: October 21, 2021Publication date: April 27, 2023Inventors: Eric Linardy, Eng Huat Toh, Ping Zheng, Kiok Boone Elgin Quek
-
Publication number: 20230065063Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor layer having a first well and a second well defining a p-n junction with the first well, and an interlayer dielectric layer on the semiconductor layer. A deep trench isolation region includes a conductor layer and a dielectric liner. The conductor layer penetrates through the semiconductor layer and the interlayer dielectric layer. The conductor layer has a first end, a second end, and a sidewall that connects the first end to the second end. The dielectric liner is arranged to surround the sidewall of the conductor layer. A metal feature is connected to the first end of the conductor layer.Type: ApplicationFiled: August 24, 2021Publication date: March 2, 2023Inventors: Ping Zheng, Eng Huat Toh, Eric Linardy, Kiok Boone Elgin Quek
-
Patent number: 11585703Abstract: Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.Type: GrantFiled: December 2, 2019Date of Patent: February 21, 2023Assignee: GlobalFoundries Singapore Pte. Ltd.Inventors: Bin Liu, Eng-Huat Toh, Shyue Seng Tan, Kiok Boone Elgin Quek
-
Patent number: 11522097Abstract: A diode device may be provided, including a semiconductor substrate including a well region arranged therein, a first doped region and a second doped region arranged within the well region, a first contact region arranged within the first doped region, and an isolation structure arranged within the first doped region, where an oxide layer may line a surface of the isolation structure. The first doped region and the first contact region may have a first conductivity type, and the well region and the second doped region may have a second conductivity type different from the first conductivity type. A doping concentration of the first contact region may be higher than a doping concentration of the first doped region, and a part of the first doped region may be arranged between the first contact region and the well region.Type: GrantFiled: October 14, 2020Date of Patent: December 6, 2022Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Khee Yong Lim, Kiok Boone Elgin Quek, Sandipta Roy
-
Patent number: 11513175Abstract: A semiconductor device may be provided including a first series portion and a second series portion electrically connected in parallel with the first series portion. The first series portion may include a first MTJ stack and a first resistive element electrically connected in series. The second series portion may include a second MTJ stack and a second resistive element electrically connected in series. The first resistive element may include a third MTJ stack and the second resistive element may include a fourth MTJ stack. The first, second, third, and fourth MTJ stacks may include a same number of layers, which may include a fixed layer, a free layer, and a tunnelling barrier layer between the fixed layer and the free layer. Alternatively, the first resistive element may include a first transistor and the second resistive element may include a second transistor.Type: GrantFiled: February 11, 2020Date of Patent: November 29, 2022Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Ping Zheng, Eng Huat Toh, Kazutaka Yamane, Shyue Seng Tan, Kiok Boone Elgin Quek
-
Publication number: 20220359580Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.Type: ApplicationFiled: May 4, 2021Publication date: November 10, 2022Inventors: Ping Zheng, Eng Huat Toh, Kiok Boone Elgin Quek, Kien Seen Daniel Chong, Jing Hua Michelle Tng
-
Patent number: 11462622Abstract: According to various embodiments, a memory cell may include a substrate of a first conductivity type, the substrate having first and second regions of a second conductivity type spaced apart and defining a channel region therebetween. The memory cell may further include a word line arranged over a portion of the channel region nearer to the first region, an erase gate arranged over the second region, a floating gate arranged over another portion of the channel region nearer to the second region and between the word line and the erase gate, and a coupling gate arranged over a top end of the floating gate. The floating gate includes the top end, a bottom end, a first side extending from the top end to the bottom end and facing the erase gate, and a second side extending from the top end to the bottom end and facing the word line.Type: GrantFiled: June 23, 2021Date of Patent: October 4, 2022Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Kian Ming Tan, Khee Yong Lim, Kiok Boone Elgin Quek
-
Publication number: 20220293614Abstract: A nonvolatile memory device is provided. The nonvolatile memory device comprises a floating gate arranged below a control gate, and between an erase gate and a word line. A first side portion of the floating gate and a second side portion of the floating gate may extend laterally beyond the control gate in substantially equal amounts. The erase gate may overhang the first side portion of the floating gate. A first control gate spacer may be arranged between the control gate and the word line. The first control gate spacer may at least partially cover a top surface of the second side portion of the floating gate.Type: ApplicationFiled: March 10, 2021Publication date: September 15, 2022Inventors: XINSHU CAI, SHYUE SENG TAN, KIOK BOONE ELGIN QUEK
-
Patent number: 11437392Abstract: An illustrative device disclosed herein includes a first memory cell comprising a first memory gate positioned above an upper surface of a semiconductor substrate and a second memory cell comprising a second memory gate positioned above the upper surface of the semiconductor substrate. In this example, the device also includes a conductive select gate structure positioned above the upper surface of the semiconductor substrate between the first and second memory gates, wherein the conductive select gate structure is shared by the first and second memory cells.Type: GrantFiled: July 28, 2020Date of Patent: September 6, 2022Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Yongshun Sun, Eng Huat Toh, Shyue Seng Tan, Kiok Boone Elgin Quek
-
Patent number: 11404549Abstract: Structures for a split gate flash memory cell and methods of forming a structure for a split gate flash memory cell. A trench is formed in a semiconductor substrate. First and second source/drain regions are formed in the semiconductor substrate. A first gate is laterally positioned between the trench and the second source/drain region, and a second gate includes a portion inside the trench. The first source/drain region is located in the semiconductor substrate beneath the trench. A dielectric layer is positioned between the portion of the second gate inside the trench and the semiconductor substrate.Type: GrantFiled: September 21, 2020Date of Patent: August 2, 2022Assignee: GlobalFoundries Singapore Pte. Ltd.Inventors: Xinshu Cai, Shyue Seng Tan, Eng Huat Toh, Kiok Boone Elgin Quek
-
Publication number: 20220205948Abstract: According to various embodiments, there is provided a sensor device that includes: a substrate and two semiconductor structures. Each semiconductor structure includes a source region and a drain region at least partially disposed within the substrate, a channel region between the source region and the drain region, and a gate region. A first semiconductor structure of the two semiconductor structures further includes a sensing element electrically connected to the first gate structure. The sensing element is configured to receive a solution. The drain regions of the two semiconductor structures are electrically coupled. The source regions of the two semiconductor structures are also electrically coupled. A mobility of charge carriers of the channel region of a second semiconductor structure of the two semiconductor structures is lower than a mobility of charge carriers of the channel region of the first semiconductor structure.Type: ApplicationFiled: March 21, 2022Publication date: June 30, 2022Inventors: Lanxiang WANG, Bin LIU, Eng Huat TOH, Shyue Seng TAN, Kiok Boone Elgin QUEK
-
Patent number: 11320417Abstract: In a non-limiting embodiment, a device may include a substrate having conducting lines thereon. One or more fin structures may be arranged over the substrate. Each fin structure may include a sensor arranged over the substrate and around the fin structure. The sensor may include a self-aligned first sensing electrode and a self-aligned second sensing electrode arranged around the fin structure. The first sensing electrode and the second sensing electrode each may include a first portion lining a sidewall of the fin structure and a second portion arranged laterally from the first portion. At least the first portion of the first sensing electrode and the first portion of the second sensing electrode may define a sensing cavity of the sensor. The second portion of the first sensing electrode and the second portion of the second sensing electrode may be electrically coupled to the conducting lines.Type: GrantFiled: July 9, 2019Date of Patent: May 3, 2022Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Xinshu Cai, Shyue Seng Tan, Eng Huat Toh, Kiok Boone Elgin Quek