Patents by Inventor Kiran M. Bhatt

Kiran M. Bhatt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4679310
    Abstract: A method of making an improved metal silicide fuse of controlled thickness for an integrated circuit structure is disclosed. The metal silicide fuse is formed by first forming a layer of known thickness of a metal capable of reacting with silicon to form a metal silicide. A layer of amorphous silicon is then formed over the metal and patterned to form the desired fuse dimensions prior to formation of the silicide. The structure is then sintered to form the metal silicide. Excess silicon remaining over the metal silicide fuse layer is then removed as is unreacted metal from areas where no silicon was present to react with the metal to form the silicide. Control of the thickness of the metal layer which subsequently reacts to form the silicide controls the thickness of the subsequently formed silicide layer to thereby form a fuse of reproducible thickness.
    Type: Grant
    Filed: October 31, 1985
    Date of Patent: July 14, 1987
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Govardhan Ramachandra, Kiran M. Bhatt