Abstract: A field effect transistor and method for making such a transistor is provided, the field effect transistor comprising: a gate layer stack comprising a layer of a first metal is disposed proximate to at least one layer of a second metal, wherein the first metal alloys with the second metal to form a shape memory alloy. The shape metal allow may be NiTi, and at the contact plane between the layers, the alloy is formed when the transistor is heated to an elevated temperature.

Abstract: A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.

Abstract: The base layer of a power permeable base transistor is formed as comb structures with grating teeth of the combs extending into active regions of semiconductor material. Extended active regions are separated by inactive regions over which collector contacts extend. Large devices have digitated base layers. The comb structures are fabricated by sputtering a uniform layer of tungsten and forming a nickel mask over the tungsten by both X-ray and photolithography techniques. The tungsten exposed by the nickel mask is then etched to leave the comb structures.

Abstract: A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.

Abstract: An electro-optical device comprising a CCD structure having charge wells, the charges therein being controlled by a modulating signal applied to said CCD structure. A multiple quantum well structure having quantum well regions associated with the charge wells of said CCD structure, the charges in the CCD charge wells determining the value of the electric fields at said quantum well regions and, hence, the electro-absorption effects at said quantum well regions. The intensity of an input electromagnetic wave signal directed through said electro-optical device is thereby spatially modulated by the electro-absorption effects at the quantum well regions of the multiple quantum well structure. A novel CCD structure using quantum well regions to form the charge wells thereof can be used as the CCD structure for controlling the electric fields at the multiple quantum well structure.

Abstract: An electrooptical switch for modulating a bias light beam in response to a control beam. The switch includes a modulator for modulating the bias beam to produce an output light beam therefrom, the modulator having a variable transmissivity; a detector module for receiving the control beam and generating a control signal therefrom, the detector module exhibiting switching operation in response to the control beam; and an amplifier for amplifiying the control signal to modulate the transmissivity of the modulator.

Abstract: A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.

Abstract: Horizontal and vertical transistors, such as, HEMT/SDHT devices are described with opposed gates for preventing substrate leakage current along with the methods for making same. Also a process for making single gate angled V-HEMT devices is described.