Abstract: A high temperature metallization system for use with a semiconductor device (23). The semiconductor device (23) has a multi-layer metallization system (36). An adhesion layer (37) of the metallization system (36) is formed on a semiconductor substrate (20). A barrier layer (38) that contains a nickel alloy is formed on the adhesion layer (37). A protective layer (39) is formed on the barrier layer (38). The barrier layer (38) inhibits solder components from diffusing toward the semiconductor substrate (20) during high temperature processing.

Abstract: A metallization system (19) for a semiconductor component (20) includes depositing a dielectric layer (12) over a substrate (10), etching a via (14) in the dielectric layer (12), sputtering a metal layer (17) of aluminum, copper, and tungsten over the dielectric layer (12) and in the via (14), and sputtering a different metal layer (18) of aluminum and copper over the first metal layer (17) and in the via (14). The metallization system (19) reduces the reliability issues associated with electromigration and stress migration while enhancing the ability to fill vias with large aspect ratios.

Abstract: A semiconductor material contacting member which greatly reduces potential for semiconductor material breakage is provided. Preferably, the contacting member is a ceramic cylinder (60) which can be used to brace a semiconductor wafer (14) in a wafer station (2) of a sputtering system. The ceramic cylinder has an annular shoulder at one end (68), with a flat outer surface. The flat outer surface contacts the wafer (14) along a line (74). The line contacting surface (74) distributes pressure and heat across the contacting surface. Additionally, the ceramic cylinder (60) is relatively soft, thus avoiding damaging the semiconductor material.