Abstract: Wafer dicing methods that simplify the singulation process for certain types of integrated circuit (IC) wafer substrates that improve device reliability and die strength, reduce the width of the cutting kerf, reduce cost, and improve yield. A first method includes making ablative scribing cuts on the front side of a wafer substrate along cutting streets around the perimeter of IC dies, followed by stealth laser dicing through the backside of the wafer substrate and in substantial alignment with the ablative scribing cuts. A second method includes making stealth laser dicing through the backside of the wafer substrate and in substantial alignment with cutting streets around the perimeter of IC dies, followed by ablative scribing cuts on the front side of a wafer substrate along the cutting streets.