Patents by Inventor Kirby Nichols

Kirby Nichols has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080017844
    Abstract: A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
    Type: Application
    Filed: December 1, 2005
    Publication date: January 24, 2008
    Inventors: Kirby Nichols, Robert Actis, Dong Xu, Wendell Kong