Patents by Inventor Kirill A. Rivkin

Kirill A. Rivkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic shield structure
    Patent number: 8564910
    Abstract: An apparatus and associated method for a magnetic shield structure for data transduction from a recordable media in a data storage device. Various embodiments of the present invention are generally directed to a data transducer and a magnetic shield structure comprising a write shield magnetic material constructed of exchange decoupled material.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: October 22, 2013
    Assignee: Seagate Technology LLC
    Inventors: Mourad Benakli, Kirill Rivkin, Kaizhong Gao, James Wessel, Ming Sun, Ibro Tabakovic, Mark Thomas Kief
  • Selectively Magnetic Write Gap Insert
    Publication number: 20120314325
    Abstract: A selectively magnetic insert that is capable of enhancing magnetic writing, such as in use as a data transducing head. In accordance with various embodiments, a write pole is in contact with a selectively magnetic insert that decouples the write pole from at least one adjacent shield in response a powered operation.
    Type: Application
    Filed: June 13, 2011
    Publication date: December 13, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: James Gary Wessel, Mourad Benakli, Raul Horacio Andruet, Kirill A. Rivkin, Sarbeswar Sahoo
  • APPARATUS INCLUDING MODIFIED WRITE POLE TIP
    Publication number: 20110310511
    Abstract: An apparatus that includes a write element including a write element tip having a leading edge, a trailing edge, and first and second side edges connecting the leading edge to the trailing edge, wherein the trailing edge is non-planar; a trailing shield proximate the trailing edge of the write element; a first side shield proximate the first side edge; and a second edge proximate the second side edge.
    Type: Application
    Filed: June 21, 2010
    Publication date: December 22, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Harry S. Edelman, David C. Seets, Mourad Benakli, Kirill A. Rivkin
  • MAGNETIC SHIELD STRUCTURE
    Publication number: 20110109999
    Abstract: An apparatus and associated method for a magnetic shield structure for data transduction from a recordable media in a data storage device. Various embodiments of the present invention are generally directed to a data transducer and a magnetic shield structure comprising a write shield magnetic material constructed of exchange decoupled material.
    Type: Application
    Filed: November 12, 2009
    Publication date: May 12, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Mourad Benakli, Kirill Rivkin, Kaizhong Gao, James Wessel, Ming Sun, Ibro Tabakovic, Mark Thomas Kief
  • Oscillating current assisted spin torque magnetic memory
    Patent number: 7800938
    Abstract: A memory unit having a spin torque memory cell with a ferromagnetic free layer, a ferromagnetic pinned layer and a spacer layer therebetween, with the free layer having a switchable magnetization orientation with a switching threshold. A DC current source is electrically connected to the spin torque memory cell to cause spin transfer torque in the free layer. An AC current source is electrically connected to the spin torque memory cell to produce an oscillatory polarized current capable of spin transfer torque via resonant coupling with the free layer.
    Type: Grant
    Filed: October 15, 2008
    Date of Patent: September 21, 2010
    Assignee: Seagate Technology, LLC
    Inventors: Kirill Rivkin, Yiran Chen, Xiaobin Wang, Haiwen Xi
  • OSCILLATING CURRENT ASSISTED SPIN TORQUE MAGNETIC MEMORY
    Publication number: 20100034017
    Abstract: A memory unit having a spin torque memory cell with a ferromagnetic free layer, a ferromagnetic pinned layer and a spacer layer therebetween, with the free layer having a switchable magnetization orientation with a switching threshold. A DC current source is electrically connected to the spin torque memory cell to cause spin transfer torque in the free layer. An AC current source is electrically connected to the spin torque memory cell to produce an oscillatory polarized current capable of spin transfer torque via resonant coupling with the free layer.
    Type: Application
    Filed: October 15, 2008
    Publication date: February 11, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Kirill Rivkin, Yiran Chen, Xiaobin Wang, Haiwen Xi