Patents by Inventor Kirill Belashchenko

Kirill Belashchenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoelectric chromia having increased critical temperature
    Patent number: 9718700
    Abstract: A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Néel temperature.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: August 1, 2017
    Assignee: Board of Regents of the University of Nebraska
    Inventors: Christian Binek, Peter Dowben, Kirill Belashchenko, Aleksander Wysocki, Sai Mu, Mike Street
  • Magneto-electric voltage controlled spin transistors
    Patent number: 9379232
    Abstract: The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: June 28, 2016
    Assignee: QUANTUM DEVICES, LLC
    Inventors: Jeffry A. Kelber, Christian Binek, Peter Arnold Bowden, Kirill Belashchenko
  • Magneto-Electric Voltage Controlled Spin Transistors
    Publication number: 20140231888
    Abstract: The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
    Type: Application
    Filed: February 18, 2014
    Publication date: August 21, 2014
    Applicants: Quantum Devices, LLC, University of North Texas
    Inventors: Jeffry A. Kelber, Christian Binek, Peter Arnold Bowden, Kirill Belashchenko