Patents by Inventor Kirill Pimenov
Kirill Pimenov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10693278Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.Type: GrantFiled: August 29, 2019Date of Patent: June 23, 2020Assignee: ElectroPhotonic-IC Inc.Inventors: Christopher Watson, Kirill Pimenov, Valery Tolstikhin, Fang Wu, Yury Logvin
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Publication number: 20200028330Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.Type: ApplicationFiled: August 29, 2019Publication date: January 23, 2020Applicant: ElectroPhotonic-IC Inc.Inventors: Christopher Watson, Kirill Pimenov, Valery Tolstikhin, Fang Wu, Yury Logvin
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Patent number: 10461504Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.Type: GrantFiled: April 24, 2019Date of Patent: October 29, 2019Assignee: ElectroPhotonic-IC Inc.Inventors: Christopher Watson, Kirill Pimenov, Valery Tolstikhin, Fang Wu, Yury Logvin
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Publication number: 20190252861Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.Type: ApplicationFiled: April 24, 2019Publication date: August 15, 2019Applicant: ElectroPhotonic-IC Inc.Inventors: Christopher Watson, Kirill Pimenov, Valery Tolstikhin, Fang Wu, Yury Logvin
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Publication number: 20120106583Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.Type: ApplicationFiled: November 2, 2010Publication date: May 3, 2012Applicant: ONECHIP PHOTONICS INC.Inventors: Christopher Watson, Kirill Pimenov, Valery Tolstikhin, Fang Wu, Yury Logvin
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Patent number: 8098969Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide.Type: GrantFiled: December 8, 2009Date of Patent: January 17, 2012Assignee: Onechip Photonics Inc.Inventors: Valery Tolstikhin, Fang Wu, Christopher Watson, Yury Logvin, Kirill Pimenov
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Publication number: 20110135314Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ONECHIP PHOTONICS INC.Inventors: Valery Tolstikhin, Fang Wu, Christopher Watson, Yury Logvin, Kirill Pimenov
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Patent number: 7796656Abstract: The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination.Type: GrantFiled: November 5, 2007Date of Patent: September 14, 2010Assignee: Onechip Photonics Inc.Inventors: Chris Watson, Kirill Pimenov, Valery Tolstikhin, Greg Letal, Ron Moore
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Patent number: 7609931Abstract: Ridge and buried waveguide structures feature a plurality of trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region where the distance between trenches and waveguide is featured.Type: GrantFiled: June 23, 2006Date of Patent: October 27, 2009Assignee: Enablence, Inc.Inventors: Yury Logvin, Serge Grabtchak, Kirill Pimenov
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Patent number: 7609919Abstract: The invention describes the method and apparatus for enhancement of coupling efficiency in effective-ridge laterally-coupled surface-etched grating waveguide structures, where a slab waveguide has a sequence of the periodic parallel segmented trenches etched from its top surface, such that the segments of intact material having higher refractive index than that in the surrounding segments of periodic trenches form the effective ridges which confine the optical field in and around these ridges, on one hand, and provide bidirectional coupling for the confined modes experiencing Bragg reflection from the segments of the periodic trenches, on the other.Type: GrantFiled: September 12, 2007Date of Patent: October 27, 2009Assignee: Onechip PhotonicsInventors: Valery Tolstikhin, Kirill Pimenov
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Publication number: 20090136173Abstract: The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.Type: ApplicationFiled: November 26, 2007Publication date: May 28, 2009Applicant: OneChip Photonics Inc.Inventors: Yury Logvin, Fang Wu, Kirill Pimenov, Valery Tolstikhin
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Patent number: 7539373Abstract: The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.Type: GrantFiled: November 26, 2007Date of Patent: May 26, 2009Assignee: Onechip Photonics Inc.Inventors: Yury Logvin, Fang Wu, Kirill Pimenov, Valery Tolstikhin
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Publication number: 20090116522Abstract: The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination.Type: ApplicationFiled: November 5, 2007Publication date: May 7, 2009Applicant: OneChip Photonics Inc.Inventors: Chris Watson, Kirill Pimenov, Valery Tolstikhin, Greg Letal, Ron Moore
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Patent number: 7471378Abstract: The present invention relates to a method for determining a polarization dependent characteristic of an optical or opto-electronic device. Using the Mueller matrix data, a matrix M corresponding to a difference between a first and a second transmission spectrum is determined. The first and the second transmission spectrum correspond to a first Stokes vector and a second Stokes vector, respectively, with the second Stokes vector being opposite to the first Stokes vector. Eigenvalues of the matrix M are then determined and the first Stokes vector is determined by selecting the largest eigenvalue of the matrix M and determining a corresponding eigenvector. The second Stokes vector is then determined as a vector opposite to the first Stokes vector. Finally, the data indicative of the polarization dependent characteristic of the device are determined using the first and the second Stokes vector and the Mueller matrix data.Type: GrantFiled: June 30, 2006Date of Patent: December 30, 2008Assignee: DBM Optical Technologies, Inc.Inventors: Eric Desfonds, Kirill Pimenov
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Patent number: 7444055Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide.Type: GrantFiled: November 21, 2007Date of Patent: October 28, 2008Assignee: OneChip Photonics Inc.Inventors: Valery Tolstikhin, Yury Logvin, Kirill Pimenov
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Publication number: 20080138008Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide.Type: ApplicationFiled: November 21, 2007Publication date: June 12, 2008Applicant: OneChip Photonics Inc.Inventors: Valery Tolstikhin, Yury Logvin, Kirill Pimenov
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Publication number: 20080069496Abstract: The invention describes the method and apparatus for enhancement of coupling efficiency in effective-ridge laterally-coupled surface-etched grating waveguide structures, where a slab waveguide has a sequence of the periodic parallel segmented trenches etched from its top surface, such that the segments of intact material having higher refractive index than that in the surrounding segments of periodic trenches form the effective ridges which confine the optical field in and around these ridges, on one hand, and provide bidirectional coupling for the confined modes experiencing Bragg reflection from the segments of the periodic trenches, on the other.Type: ApplicationFiled: September 12, 2007Publication date: March 20, 2008Applicant: OneChip Photonics Inc.Inventors: Valery Tolstikhin, Kirill Pimenov
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Publication number: 20070031083Abstract: Ridge and buried waveguide structures feature a plurality of trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region where the distance between trenches and waveguide is featured.Type: ApplicationFiled: June 23, 2006Publication date: February 8, 2007Inventors: Yury Logvin, Serge Grabtchak, Kirill Pimenov
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Publication number: 20070002321Abstract: The present invention relates to a method for determining a polarization dependent characteristic of an optical or opto-electronic device. Using the Mueller matrix data, a matrix M corresponding to a difference between a first and a second transmission spectrum is determined. The first and the second transmission spectrum correspond to a first Stokes vector and a second Stokes vector, respectively, with the second Stokes vector being opposite to the first Stokes vector. Eigenvalues of the matrix M are then determined and the first Stokes vector is determined by selecting the largest eigenvalue of the matrix M and determining a corresponding eigenvector. The second Stokes vector is then determined as a vector opposite to the first Stokes vector. Finally, the data indicative of the polarization dependent characteristic of the device are determined using the first and the second Stokes vector and the Mueller matrix data.Type: ApplicationFiled: June 30, 2006Publication date: January 4, 2007Inventors: Eric Desfonds, Kirill Pimenov
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Publication number: 20040208465Abstract: Ridge and buried waveguide structures feature trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region in which the distance between the trenches and the waveguide is featured.Type: ApplicationFiled: April 19, 2004Publication date: October 21, 2004Inventors: Yury Logvin, Serge Grabtchak, Kirill Pimenov