Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Abstract: Embodiments disclosed herein include to a component support for use in coating chamber components via chemical vapor deposition (CVD). The component support includes contact rods configured to contact chamber components at fixture points located on the backside of the chamber components. The component supports are configured to support the chamber components in the processing volume with minimal contact of the chamber components. The fixture points on the backside reduce exposure of the fixture points to reactant gases when the chamber components are installed.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a susceptor ledge on an outer circumferential edge of a front side of the susceptor substrate, wherein a pocket within the susceptor ledge is configured to hold a wafer to be processed in a processing chamber, and a coating layer deposited on the susceptor substrate, wherein a surface of the susceptor ledge is textured with a plurality of venting groove lines, a surface of the pocket is textured with a first pattern, and a surface of a back side of the susceptor substrate opposite the front side is textured with a second pattern.

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Abstract: A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.

Abstract: Systems and apparatus for a reduced mass substrate support are disclosed, according to certain embodiments. A front side pocket is provided for support of a substrate, while a backside pocket is provided that reduces the mass of the substrate support. By providing the backside pocket, the mass of the overall substrate support is reduced, providing faster thermal cycling times for the substrate support and reducing the weight of the substrate support for transport. Lift pin systems, according to disclosed embodiments, are compatible with existing pedestal systems by providing a hollow extension from each lift pin hole that extends from a bottom of the backside pocket to provide support for lift pin insertion and operation.

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

Abstract: Methods and apparatus are described for transparently processing a fax transmission by a fax software program in a mobile device. In one embodiment, the fax software program identifies an incoming call at the mobile device. Upon the identification, the program prevents a display screen of the mobile device from outputting an incoming call ringing alert. The program answers the incoming call and analyzes the call to detect whether the answered call is a voice call. Upon detecting that the answered incoming call is a voice call, the program outputs the incoming call ringing alert via the display screen. Otherwise, if the answered incoming call is a fax transmission, the program merges the call with a fax server, such that the fax server receives the fax transmission. Other embodiments are also described and claimed.

Abstract: Some embodiments provide a system or a method to switch off an air conditioning system when an ice formation condition is present. The ice formation condition is present when the temperature, in either degrees Celsius or Fahrenheit, at an indoor evaporator unit or an indoor evaporator coil is below a threshold temperature. Some embodiments allow a user to change the threshold temperature. The system can include a user interface to provide notifications when an ice formation condition is present.

Abstract: Methods and apparatus are described for transparently processing a fax transmission by a fax software program in a mobile device. In one embodiment, the fax software program identifies an incoming call at the mobile device. Upon the identification, the program prevents a display screen of the mobile device from outputting an incoming call ringing alert. The program answers the incoming call and analyzes the call to detect whether the answered call is a voice call. Upon detecting that the answered incoming call is a voice call, the program outputs the incoming call ringing alert via the display screen. Otherwise, if the answered incoming call is a fax transmission, the program merges the call with a fax server, such that the fax server receives the fax transmission. Other embodiments are also described and claimed.

Abstract: Methods and apparatus are described for transparently processing a fax transmission by a fax software program in a mobile device. In one embodiment, the fax software program identifies an incoming call at the mobile device. Upon the identification, the program prevents a display screen of the mobile device from outputting an incoming call ringing alert. The program answers the incoming call and analyzes the call to detect whether the answered call is a voice call. Upon detecting that the answered incoming call is a voice call, the program outputs the incoming call ringing alert via the display screen. Otherwise, if the answered incoming call is a fax transmission, the program merges the call with a fax server, such that the fax server receives the fax transmission. Other embodiments are also described and claimed.

Abstract: Some embodiments provide a system or a method to switch off an air conditioning system when an ice formation condition is present. The ice formation condition is present when the temperature, in either degrees Celsius or Fahrenheit, at an indoor evaporator unit or an indoor evaporator coil is below a threshold temperature. Some embodiments allow a user to change the threshold temperature. The system can include a user interface to provide notifications when an ice formation condition is present.

Abstract: Methods and apparatus are described for transparently processing a fax transmission by a fax software program in a mobile device. In one embodiment, the fax software program identifies an incoming call at the mobile device. Upon the identification, the program prevents a display screen of the mobile device from outputting an incoming call ringing alert. The program answers the incoming call and analyzes the call to detect whether the answered call is a voice call. Upon detecting that the answered incoming call is a voice call, the program outputs the incoming call ringing alert via the display screen. Otherwise, if the answered incoming call is a fax transmission, the program merges the call with a fax server, such that the fax server receives the fax transmission. Other embodiments are also described and claimed.