Patents by Inventor Kirk J. Bertsche
Kirk J. Bertsche has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8427185Abstract: A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.Type: GrantFiled: February 10, 2011Date of Patent: April 23, 2013Assignee: KLA-Tencor CorporationInventors: George H. Zapalac, Jr., Kirk J. Bertsche, David L. Brown, J. Kirkwood H. Rough, David A. Soltz, Yehiel Gotkis
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Publication number: 20110133750Abstract: A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.Type: ApplicationFiled: February 10, 2011Publication date: June 9, 2011Applicant: KLA-TENCOR CORPORATIONInventors: George H. Zapalac, JR., Kirk J. Bertsche, David L. Brown, J. Kirkwood H. Rough, David A. Soltz, Yehiel Gotkis
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Patent number: 7906972Abstract: A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.Type: GrantFiled: December 4, 2009Date of Patent: March 15, 2011Assignee: KLA-Tencor CorporationInventors: George H. Zapalac, Jr., Kirk J. Bertsche, David L. Brown, J. Kirkwood H. Rough, David A. Soltz, Yehiel Gotkis
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Publication number: 20100079147Abstract: A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.Type: ApplicationFiled: December 4, 2009Publication date: April 1, 2010Applicant: KLA-TENCOR CORPORATIONInventors: George H. Zapalac, Jr., Kirk J. Bertsche, David L. Brown, J. Kirkwood H. Rough, David A. Soltz, Yehiel Gotkis
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Patent number: 7649365Abstract: A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.Type: GrantFiled: March 24, 2007Date of Patent: January 19, 2010Assignee: KLA-Tencor CorporationInventors: George H. Zapalac, Jr., Kirk J. Bertsche, David L. Brown, J. Kirkwood H. Rough, David A. Soltz, Yehiel Gotkis
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Patent number: 7507959Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.Type: GrantFiled: December 21, 2006Date of Patent: March 24, 2009Assignee: KLA-Tencor Technologies CorporationInventors: Kirk J. Bertsche, Mark A. McCord
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Patent number: 7446320Abstract: One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.Type: GrantFiled: October 26, 2005Date of Patent: November 4, 2008Assignee: KLA-Tencor Technologies CorproationInventors: Mark A. McCord, Kirk J. Bertsche, Francisco Machuca
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Patent number: 7394069Abstract: One embodiment relates to a charged-particle beam apparatus. The apparatus includes at least a source for generating the charged-particle beam, a first deflector, and a second deflector. The first deflector is configured to scan the charged-particle beam in a first dimension. The second deflector is configured to deflect the scanned beam such that the scanned beam impinges telecentrically (perpendicularly) upon a surface of a target substrate. Other embodiments are also disclosed.Type: GrantFiled: November 15, 2005Date of Patent: July 1, 2008Assignee: KLA-Tencor Technologies CorporationInventor: Kirk J. Bertsche
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Patent number: 7391034Abstract: One embodiment pertains to an apparatus which impinges a focused electron beam onto a substrate. The apparatus includes an irradiation source and at least two non-axisymmetric lenses. The irradiation source is configured to originate electrons for an incident electron beam. The non-axisymmetric lenses are positioned after the irradiation source and are configured to focus the beam in a first linear dimension so as to produce a linear crossover of the beam. The non-axisymmetric lenses are further configured to subsequently focus the beam in a second linear dimension, which is substantially perpendicular to the first linear dimension. Finally, the non-axisymmetric lenses are also configured to produce a focused image at an image plane. Other embodiments are also disclosed.Type: GrantFiled: November 8, 2005Date of Patent: June 24, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Kirk J. Bertsche, Harald F. Hess
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Patent number: 7315022Abstract: One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.Type: GrantFiled: January 6, 2005Date of Patent: January 1, 2008Assignee: KLA-Tencor Technologies CorporationInventors: David L. Adler, Mark A. McCord, Mehdi Vaez-Iravani, Liqun Han, Kirk J. Bertsche
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Patent number: 7276694Abstract: One embodiment disclosed relates to an apparatus for detecting defects in substrates. An irradiation source is configured to generate an incident beam, and a lens system configured to focus the incident beam onto a target substrate so as to cause emission of electrons. A multiple-bin detector is configured to detect the emitted electrons, and each bin of the detector detects the emitted electrons within a range of energies. A processing system configured to process signals from the multiple-bin detector. Other embodiments are also disclosed.Type: GrantFiled: March 29, 2005Date of Patent: October 2, 2007Assignee: KLA-Tencor Technologies CorporationInventor: Kirk J. Bertsche
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Patent number: 7253410Abstract: One embodiment described relates to a method of electron beam imaging of a target area of a substrate. An electron beam column is configured for charge-control pre-scanning using a primary electron beam. A pre-scan is performed over the target area. The electron beam column is re-configured for imaging using the primary electron beam. An imaging scan is then performed over the target area. Other embodiments are also described.Type: GrantFiled: September 13, 2005Date of Patent: August 7, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Kirk J. Bertsche, John Greene
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Patent number: 7176468Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.Type: GrantFiled: September 16, 2004Date of Patent: February 13, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Kirk J. Bertsche, Mark A. McCord
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Patent number: 7019292Abstract: One embodiment disclosed relates to a method for robustly detecting a defective high aspect ratio (HAR) feature. A surface area of a semiconductor specimen with HAR features thereon is charged up, and a primary beam is impinged onto the surface area. Scattered electrons that are generated due to the impingement of the primary beam are extracted from the surface area. An energy filter is applied to remove the scattered electrons with lower energies, and the filtered electrons are detected. Image data is generated from the detected electrons, and an intensity threshold is applied to the image data.Type: GrantFiled: June 15, 2004Date of Patent: March 28, 2006Assignee: KLA-Tencor Technologies CorporationInventors: Frank Y. H. Fan, David L. Adler, Kirk J. Bertsche, Luca Grella
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Patent number: 6870172Abstract: One embodiment disclosed relates to an apparatus for reflection electron beam lithography. An electron source is configured to emit electrons. The electrons are reflected to a target substrate by portions of an electron-opaque patterned structure having a lower voltage level and are absorbed by portions of the structure having a higher voltage level. Another embodiment relates to a novel method of electron beam lithography. An incident electron beam is formed and directed to an opaque patterned structure. Electrons are reflected from portions of the structure having a lower voltage level applied thereto and are absorbed by portions of the structure having a higher voltage level applied thereto. The reflected electrons are directed towards a target substrate to form an image and expose a lithographic pattern.Type: GrantFiled: May 21, 2004Date of Patent: March 22, 2005Assignee: KLA-Tencor Technologies CorporationInventors: Marian Mankos, Harald F. Hess, David L. Adler, Kirk J. Bertsche
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Patent number: 6822246Abstract: Apparatus configurations are disclosed for generating a ribbon-like beam that impinges onto a target specimen as an elongated spot. The elongated spot has a first dimension that is substantially elongated in comparison to a second dimension. The configuration may be non-axisymmetric and include means for point-to-parallel focusing in the first dimension and point-to-point focusing in the second dimension. In accordance with one embodiment, the apparatus may include a first lens subsystem for transforming the electron beam into an intermediate-stage beam, and a second lens subsystem for focusing the intermediate-stage beam into the elongated spot. Methods are disclosed for focusing the electron beam into the elongated spot. In accordance with one embodiment, a method may include transforming the electron beam into an intermediate-stage beam, and focusing the intermediate-stage beam into a ribbon-like beam that impinges onto a target specimen as an elongated spot.Type: GrantFiled: March 27, 2002Date of Patent: November 23, 2004Assignee: KLA-Tencor Technologies CorporationInventor: Kirk J. Bertsche
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Publication number: 20030183763Abstract: Apparatus configurations are disclosed for generating a ribbon-like beam that impinges onto a target specimen as an elongated spot. The elongated spot has a first dimension that is substantially elongated in comparison to a second dimension. The configuration may be non-axisymmetric and include means for point-to-parallel focusing in the first dimension and point-to-point focusing in the second dimension. In accordance with one embodiment, the apparatus may include a first lens subsystem for transforming the electron beam into an intermediate-stage beam, and a second lens subsystem for focusing the intermediate-stage beam into the elongated spot. Methods are disclosed for focusing the electron beam into the elongated spot. In accordance with one embodiment, a method may include transforming the electron beam into an intermediate-stage beam, and focusing the intermediate-stage beam into a ribbon-like beam that impinges onto a target specimen as an elongated spot.Type: ApplicationFiled: March 27, 2002Publication date: October 2, 2003Inventor: Kirk J. Bertsche