Patents by Inventor Kirk William Baldwin
Kirk William Baldwin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8633092Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: GrantFiled: December 12, 2012Date of Patent: January 21, 2014Assignee: Alcatel LucentInventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
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Publication number: 20130130474Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer, The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: ApplicationFiled: December 12, 2012Publication date: May 23, 2013Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
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Patent number: 8362461Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: GrantFiled: May 28, 2010Date of Patent: January 29, 2013Assignee: Alcatel LucentInventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
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Patent number: 8324120Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: GrantFiled: May 6, 2011Date of Patent: December 4, 2012Assignee: Alcatel LucentInventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L Willett
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Publication number: 20110212553Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L. Willett
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Patent number: 7960714Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: GrantFiled: December 23, 2008Date of Patent: June 14, 2011Assignee: Alcatel-Lucent USA Inc.Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L Willett
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Publication number: 20100308302Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: ApplicationFiled: May 28, 2010Publication date: December 9, 2010Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
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Publication number: 20100155697Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: ApplicationFiled: December 23, 2008Publication date: June 24, 2010Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L. Willett
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Patent number: 6778734Abstract: A thermally tunable optical fiber device comprises a length of optical fiber including a device disposed within a microcapillary heater. The microcapillary heater can include a thin film resistive heater. The fiber itself can optionally include a thin film resistive heater overlying the device, and a plurality of nested microcapillary tubes can optionally provide a plurality of successive concentric heaters overlying the device. The heaters films can be films with uniform, tapered or periodically varying thickness. The heaters can be single layer or multiple layer. Multiple layer films can be superimposed with intervening insulating layers or plural layers can be formed on different angular regions of the microcapillary. Thus one can provide virtually any desired temperature versus length profile along the fiber device.Type: GrantFiled: January 15, 2002Date of Patent: August 17, 2004Assignee: Lucent Technologies Inc.Inventors: Kirk William Baldwin, Benjamin John Eggleton, Kenneth Stephen Feder, Robert A. Macharrie, John A. Rogers, Paul Steinvurzel, Jon Engelberth, Rajan Deshmukh
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Publication number: 20030133656Abstract: A thermally tunable optical fiber device comprises a length of optical fiber including a device disposed within a microcapillary heater. The microcapillary heater can include a thin film resistive heater. The fiber itself can optionally include a thin film resistive heater overlying the device, and a plurality of nested microcapillary tubes can optionally provide a plurality of successive concentric heaters overlying the device. The heaters films can be films with uniform, tapered or periodically varying thickness. The heaters can be single layer or multiple layer. Multiple layer films can be superimposed with intervening insulating layers or plural layers can be formed on different angular regions of the microcapillary. Thus one can provide virtually any desired temperature versus length profile along the fiber device.Type: ApplicationFiled: January 15, 2002Publication date: July 17, 2003Inventors: Kirk William Baldwin, Benjamin John Eggleton, Kenneth Stephen Feder, Robert A. Macharrie, John A. Rogers, Paul Steinvurzel, Jon Engelberth, Rajan Deshmukh