Abstract: A partial memory die is removed from an edge of a wafer such that the partial memory die is missing a portion of the memory structure that was not printed on the wafer. A usable portion of the incomplete memory structure is determined and one or more rectangular zones in the usable portion of the incomplete memory structure are identified. During operation of the memory system, the memory system receives logical addresses for memory operations to be performed on the partial memory die and determines physical addresses that corresponding to the logical addresses. The memory system performs an out of bounds response for a physical address that is on the partial memory die but outside of the one or more rectangular zones. The memory system performs memory operations for physical addresses that are inside the one or more rectangular zones.

Abstract: Systems and methods for die crack detection are disclosed. In one exemplary embodiment, a die includes a first conductive segment, an intermediate conductive segment, and a second conductive segment. The crack detection ring substantially surrounds the die according to a serpentine path having a plurality of legs, wherein each leg intersects the first conductive segment at a first intersection, an intermediate conductive segment at an intermediate intersection and a second conductive segment at a second intersection, wherein the intermediate intersection is horizontally offset from at least the first intersection and the second intersection.

Abstract: An apparatus is provided that includes a reticle including a die, the reticle configured to increase a number of partial die that can be successfully used as partially operable die.

Abstract: A partial memory die is removed from an edge of a wafer such that the partial memory die is missing a portion of the memory structure that was not printed on the wafer. A usable portion of the incomplete memory structure is determined and one or more rectangular zones in the usable portion of the incomplete memory structure are identified. During operation of the memory system, the memory system receives logical addresses for memory operations to be performed on the partial memory die and determines physical addresses that corresponding to the logical addresses. The memory system performs an out of bounds response for a physical address that is on the partial memory die but outside of the one or more rectangular zones. The memory system performs memory operations for physical addresses that are inside the one or more rectangular zones.

Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.

Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.

Abstract: A partial memory die comprises a memory structure that includes a first plane of non-volatile memory cells and a second plane of non-volatile memory cells. The second plane of non-volatile memory cells is incomplete. A first buffer is connected to the first plane. A second buffer is connected to the second plane. A data path circuit is connected to an input interface, the first buffer and the second buffer. The data path circuit is configured to map data received at the input interface and route the mapped data to either the first buffer or the second buffer. An inter-plane re-mapping circuit is connected to the first buffer and the second buffer, and is configured to re-map data from the first buffer and store the re-mapped data in the second buffer for programming into the second plane.

Abstract: A memory system performs verification when writing to memory. It is possible that the memory system may be missing some components (or components may be otherwise unavailable). To account for missing or unavailable components when performing verification, the memory system uses a pattern of data that includes a mask identifying the missing or unavailable components. The mask is used to force a predetermined result of the verification for the missing or unavailable portions of the memory structure so that results of the verification that correspond to the missing or unavailable components are not counted as errors.

Abstract: Techniques are presented for testing the high-speed data path between the IO pads and the read/write buffer of a memory circuit without the use of an external test device. In an on-chip process, a data test pattern is transferred at a high data rate between the read/write register and a source for the test pattern, such as register for this purpose or the read/write buffer of another plane. The test data after the high-speed transfer is then checked against its expected, uncorrupted value, such as by transferring it back at a lower speed for comparison or by transferring the test data a second time, but at a lower rate, and comparing the high transfer rate copy with the lower transfer rate copy at the receiving end of the transfers.

Abstract: Techniques are presented for testing the high-speed data path between the IO pads and the read/write buffer of a memory circuit without the use of an external test device. In an on-chip process, a data test pattern is transferred at a high data rate between the read/write register and a source for the test pattern, such as register for this purpose or the read/write buffer of another plane. The test data after the high-speed transfer is then checked against its expected, uncorrupted value, such as by transferring it back at a lower speed for comparison or by transferring the test data a second time, but at a lower rate, and comparing the high transfer rate copy with the lower transfer rate copy at the receiving end of the transfers.

Abstract: Techniques are presented for the prevention and detection of inter-plane disturbs in a memory circuit, where, when concurrently performing memory operations on multiple planes, a defect in one plane can feed back through a common supply node and adversely affect memory operations in another node. To isolate such defects to plane in which the occur, the memory supplies the elements, such as a word line, of different planes from a common supply node through a uni-directional circuit element, such as a diode. In this way, if the voltage on an element in an array gets pulled up to an elevated voltage though a defect, this elevated voltage is stopped from flowing back to the common supply node. Additionally, by comparing the voltage levels on either side of the uni-directional circuit element, it can be determined whether such a defect is present in an array.

Abstract: Techniques are presented for the prevention and detection of inter-plane disturbs in a memory circuit, where, when concurrently performing memory operations on multiple planes, a defect in one plane can feed back through a common supply node and adversely affect memory operations in another node. To isolate such defects to plane in which the occur, the memory supplies the elements, such as a word line, of different planes from a common supply node through a uni-directional circuit element, such as a diode. In this way, if the voltage on an element in an array gets pulled up to an elevated voltage though a defect, this elevated voltage is stopped from flowing back to the common supply node. Additionally, by comparing the voltage levels on either side of the uni-directional circuit element, it can be determined whether such a defect is present in an array.

Abstract: Methods for memory block protection and memory devices are disclosed. One such method for memory block protection includes programming protection data to protection bytes diagonally across different word lines of a particular memory block (e.g., Boot ROM). The protection data can be retrieved by an erase verify operation that can be performed at power-up of the memory device.

Abstract: Methods for memory block protection and memory devices are disclosed. One such method for memory block protection includes programming protection data to protection bytes diagonally across different word lines of a particular memory block (e.g., Boot ROM). The protection data can be retrieved by an erase verify operation that can be performed at power-up of the memory device.

Abstract: Methods for memory block protection and memory devices are disclosed. One such method for memory block protection includes programming protection data to protection bytes diagonally across different word lines of a particular memory block (e.g., Boot ROM). The protection data can be retrieved by an erase verify operation that can be performed at power-up of the memory device.

Abstract: One or more techniques are provided for restricting access to protected modes of operation in a memory device. In one embodiment, detection circuitry is provided and configured to receive and evaluate a protected mode entry sequence for accessing a protected mode of operation. The detection circuitry may be further configured to temporarily enable an output pin on a serial interface between the memory device and a master device to receive inputs, such that a entry sequence may be entered on both the input and output pins. In another embodiment, the detection circuitry may be enabled only if a security code is first provided, thus requiring both the correct security code and entry sequence before protected mode access is allowed. The memory device may also include a parallel NAND memory array, and detection logic may be further configured to enable a serial-to-parallel NAND translator once protected mode access is allowed.

Abstract: Methods for memory block protection and memory devices are disclosed. One such method for memory block protection includes programming protection data to protection bytes diagonally across different word lines of a particular memory block (e.g., Boot ROM). The protection data can be retrieved by an erase verify operation that can be performed at power-up of the memory device.

Abstract: One or more techniques are provided for restricting access to protected modes of operation in a memory device. In one embodiment, detection circuitry is provided and configured to receive and evaluate a protected mode entry sequence for accessing a protected mode of operation. The detection circuitry may be further configured to temporarily enable an output pin on a serial interface between the memory device and a master device to receive inputs, such that a entry sequence may be entered on both the input and output pins. In another embodiment, the detection circuitry may be enabled only if a security code is first provided, thus requiring both the correct security code and entry sequence before protected mode access is allowed. The memory device may also include a parallel NAND memory array, and detection logic may be further configured to enable a serial-to-parallel NAND translator once protected mode access is allowed.