Abstract: A polarizing plate and an optical display apparatus are disclosed. A polarizing plate includes a polarizer and a stack of retardation layers on a surface of the polarizer, and the stack of retardation layers includes a second retardation layer and a first retardation layer stacked on the polarizer in sequence from the surface of the polarizer, the second retardation layer being a non-liquid crystal layer, and the stack of retardation layers has an out-of-plane retardation of ?40 nm or more to less than 0 nm at a wavelength of 550 nm and satisfies Relation 1.

Abstract: This disclosure provides a display panel including a first substrate with pixel areas and emission areas defined by a plurality of gate lines and a plurality of data lines; and a second substrate on which partitions are formed to correspond with the emission areas. The present disclosure provides a method for improving luminance efficiency of a display device having a mirror or transmittance function.

Abstract: This disclosure provides a display panel including a first substrate with pixel areas and emission areas defined by a plurality of gate lines and a plurality of data lines; and a second substrate on which partitions are formed to correspond with the emission areas. The present disclosure provides a method for improving luminance efficiency of a display device having a mirror or transmittance function.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.