Abstract: A method of forming a pattern structure and a method of fabricating a semiconductor device using the pattern structure, are provided the method of forming the pattern structure includes forming a mask on an underlying layer formed on a lower layer. The underlying layer is etched using the mask as an etching mask, thereby forming patterns on the lower layer. The patterns define at least one opening. A sacrificial layer is formed in the opening and the mask is removed. The sacrificial layer in the opening is partially etched when the mask is removed.

Abstract: A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.

Abstract: Semiconductor devices and methods of fabricating a semiconductor device are provided. The method includes forming a conductive region in a substrate and forming a dielectric layer on the substrate including the conductive region. The dielectric layer has an opening that exposes the conductive region. A buffer semiconductor pattern having a single crystalline state is formed on the exposed conductive region. A filling semiconductor pattern is formed in the opening using an epitaxial process that employs the single crystalline buffer semiconductor pattern as a seed layer. Related devices are also provided.

Abstract: A variable resistance memory device includes a substrate having a cell array region and a peripheral circuit region, an epitaxial semiconductor layer on the cell array region and the peripheral circuit region, and a peripheral transistor whose channel region is constituted by the epitaxial semiconductor layer on the peripheral circuit region. The peripheral transistor is formed by forming a gate electrode structure on the epitaxial semiconductor layer, and implanting impurities into the epitaxial semiconductor layer to form a source/drain region.

Abstract: A method of forming a pattern structure and a method of fabricating a semiconductor device using the pattern structure, are provided the method of forming the pattern structure includes forming a mask on an underlying layer formed on a lower layer. The underlying layer is etched using the mask as an etching mask, thereby forming patterns on the lower layer. The patterns define at least one opening. A sacrificial layer is formed in the opening and the mask is removed. The sacrificial layer in the opening is partially etched when the mask is removed.